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LDTA114YET1 PDF预览

LDTA114YET1

更新时间: 2024-10-29 03:12:07
品牌 Logo 应用领域
乐山 - LRC 晶体晶体管
页数 文件大小 规格书
4页 90K
描述
Bias Resistor Transistors

LDTA114YET1 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.8
Is Samacsys:N最大集电极电流 (IC):0.1 A
最小直流电流增益 (hFE):80元件数量:1
极性/信道类型:PNP最大功率耗散 (Abs):0.3 W
子类别:BIP General Purpose Small Signal表面贴装:YES
晶体管元件材料:SILICONBase Number Matches:1

LDTA114YET1 数据手册

 浏览型号LDTA114YET1的Datasheet PDF文件第2页浏览型号LDTA114YET1的Datasheet PDF文件第3页浏览型号LDTA114YET1的Datasheet PDF文件第4页 
LESHAN RADIO COMPANY, LTD.  
Bias Resistor Transistors  
PNP Silicon Surface Mount Transistors  
LDTA114YET1  
With Monolithic Bias Resistor Network  
3
This new series of digital transistors is designed to replace a single  
device and its external resistor bias network. The BRT (Bias Resistor  
Transistor) contains a single transistor with a monolithic bias network  
consisting of two resistors; a series base resistor and a base-emitter  
resistor. The BRT eliminates these individual components by integrating  
them into a single device. The use of a BRT can reduce both system  
cost and board space. The device is housed in the SC-89 package  
which is designed for low power surface mount applications.  
ƽSimplifies Circuit Design  
1
2
SC-89  
Pin 3  
Collector  
(Output)  
ƽReduces Board Space  
Pin 1  
Base  
(Input)  
R
R
1
ƽReduces Component Count  
ƽThe SC-89 Package can be Soldered using Wave or Reflow.  
ƽAvailable in 8 mm, 7 inch/3000 Unit Tape & Reel  
2
Pin 2  
Emitter  
(Ground)  
ƽThis is Pb-Free Device.  
DEVICE MARKING AND ORDERING INFORMATION  
Device  
Marking  
Package  
Shipping  
SC-89  
(Pb-Free)  
LDTA114YET1  
6D  
3000/Tape&Reel  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
MARKING DIAGRAM  
Rating  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector Current  
Symbol  
Value  
50  
Unit  
Vdc  
3
V
CBO  
CEO  
V
50  
Vdc  
XX M  
I
C
100  
mAdc  
2
1
THERMAL CHARACTERISTICS  
Characteristic  
xx = Specific Device Code  
= Date Code  
Symbol  
Max  
Unit  
M
Total Device Dissipation  
P
D
200 (Note 1)  
300 (Note 2)  
1.6 (Note 1)  
2.4 (Note 2)  
mW  
T = 25°C  
A
mW/°C  
°C/W  
°C  
Derate above 25°C  
Thermal Resistance –  
Junction-to-Ambient  
R
600 (Note 1)  
400 (Note 2)  
θ
JA  
Junction and Storage  
Temperature Range  
T
–55 to +150  
J, Tstg  
1. FR–4 @ Minimum Pad  
2. FR–4 @ 1.0 x 1.0 inch Pad  
Version 1.0  
LDTA114YET1-1/4  

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