Datasheet > LCEP0178A

LCEP0178A

更新时间： 2025-07-17 18:28:03

品牌	Logo	应用领域
雷卯电子 - LEIDITECH		/
页数	文件大小	规格书
6页	897K
描述
Package : TO-220-3; Vdss Min(V) Drain-Source voltage : 100; Drain Current ID(A)25℃ : 78; Vgs(V) : 20; Vth Typ : 1.7; Ron(10V) (mΩ)Typ : 7.2; Ron(10V) (mΩ) Max : 8.5; Ron(4.5V) (mΩ)Typ : 9.5; Ron(4.5V) (mΩ)Max : 12;

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LCEP0178A 数据手册

LCEP0178A

LCE N-Channel Super Trench Power MOSFET

Description

The LCEP0178A uses Super Trench technology that is

uniquely optimized to provide the most efficient high

frequency switching performance. Both conduction and

switching power losses are minimized due to an extremely

low combination of R_DS(ON)and Q_g. This device is ideal for

high-frequency switching and synchronous rectification.

Schematic diagram

General Features

● V_DS=100V,I_D=78A

R_DS(ON)=7.2mΩ(typical) @ V_GS=10V

R_DS(ON)=9.5mΩ(typical) @ V_GS=4.5V

● Excellent gate charge x R_DS(on)product(FOM)

● Very low on-resistance R_DS(on)

● 175 °C operating temperature

● Pb-free lead plating

● 100% UIS tested

Marking and pin assignment

Application

● DC/DC Converter

● Ideal for high-frequency switching and synchronous

rectification

100% UIS TESTED!

TO-220-3L top view

100% ∆Vds TESTED!

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

NCEP0178A

LCEP0178A

TO-220-3L

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

Limit

100

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^DS

±20

V^GS

I_D

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

I_D(100℃)

I_DM

320

Maximum Power Dissipation

125

P_D

Derating factor

Single pulse avalanche energy ^{(Note 5)}

0.83

W/℃

℃

E_AS

320

Operating Junction and Storage Temperature Range

-55 To 175

T_J,T_STG

1/6

01.06.2015

Rev :

www.leiditech.com

12 3 4 5 6

中文翻译

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