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LCE7.0-E3/54 PDF预览

LCE7.0-E3/54

更新时间: 2024-11-19 19:46:31
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 83K
描述
Trans Voltage Suppressor Diode, 7V V(RWM), Unidirectional,

LCE7.0-E3/54 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.84
击穿电压标称值:8.65 V最大钳位电压:13.3 V
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-609代码:e3
极性:UNIDIRECTIONAL最大重复峰值反向电压:7 V
子类别:Transient Suppressors表面贴装:NO
端子面层:Matte Tin (Sn)Base Number Matches:1

LCE7.0-E3/54 数据手册

 浏览型号LCE7.0-E3/54的Datasheet PDF文件第2页浏览型号LCE7.0-E3/54的Datasheet PDF文件第3页浏览型号LCE7.0-E3/54的Datasheet PDF文件第4页 
LCE6.5A thru LCE28A  
Vishay General Semiconductor  
www.vishay.com  
®
Low Capacitance TRANSZORB Transient Voltage Suppressors  
FEATURES  
• Glass passivated chip junction  
• 1500 W peak pulse power capability with a  
10/1000 μs waveform, repetitive rate (duty cycle):  
0.01 %  
• Excellent clamping capability  
• Very fast response time  
• Low incremental surge resistance  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
Case Style 1.5KE  
TYPICAL APPLICATIONS  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and lighting  
on ICs, MOSFET, signal lines of sensor units for consumer,  
PRIMARY CHARACTERISTICS  
computer, industrial, and telecommunication.  
VWM  
BR (uni-directional)  
PPPM  
6.5 V to 28 V  
MECHANICAL DATA  
V
7.22 V to 34.4 V  
1500 W  
Case: Molded epoxy body over passivated junction  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS compliant, commercial grade  
PD  
6.5 W  
TJ max.  
175 °C  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test  
Polarity  
Uni-directional  
1.5KE  
Package  
Polarity: Color band denotes TVS cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
PPPM  
LIMIT  
1500  
UNIT  
W
Peak pulse power dissipation with a 10/1000 μs waveform (1) (fig. 1)  
Peak power pulse surge current with a 10/1000 μs waveform (1) (fig. 2)  
Power dissipation on infinite heatsink at TL = 75 °C (fig. 2)  
Operating junction and storage temperature range  
IPPM  
See next table  
6.5  
A
PD  
W
TJ, TSTG  
- 65 to + 175  
°C  
Note  
(1)  
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig.  
Revision: 24-Sep-12  
Document Number: 88357  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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