Datasheet > LCE65T1K2D

LCE65T1K2D

更新时间： 2022-06-24 15:44:03

品牌	Logo	应用领域
雷卯电子 - LEIDITECH		/
页数	文件大小	规格书
9页	1968K
描述
LCE N-Channel Super Junction Power MOSFET

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LCE65T1K2D 数据手册

LCE65T1K2,LCE65T1K2D,LCE65T1K2F

LCE N-Channel Super Junction Power MOSFET

General Description

The series of devices use advanced trench gate super

junction technology and design to provide excellent R^DS(ON)

with low gate charge. This super junction MOSFET fits the

industry’s AC-DC SMPS requirements for PFC, AC/DC

power conversion, and industrial power applications.

V_DS

650

950

mΩ

R_DS(ON)TYP.

I_D

Features

●New technology for high voltage device

●Low on-resistance and low conduction losses

●Small package

●Ultra Low Gate Charge cause lower driving requirements

●100% Avalanche Tested

●ROHS compliant

Application

● Power factor correction（PFC）

● Switched mode power supplies(SMPS)

● Uninterruptible Power Supply（UPS）

Schematic diagram

Package Marking And Ordering Information

Device

Device Package

TO-220

Marking

LCE65 T1K2

LCE65 T1K2D

LCE65 T1K2F

NCE65T1K2

NCE65T1K2D

NCE65T1K2F

TO-263

TO-220F

TO-263

TO-220

TO-220F

Table 1. Absolute Maximum Ratings (T_C=25℃)

LCE65T1K2

LCE65T1K2D

Parameter

Symbol

LCE65T1K2F Unit

650

Drain-Source Voltage (V^GS=0V）

V^DS

V^GS

±30

Gate-Source Voltage (V^DS=0V) ,AC (f>1 Hz)

Continuous Drain Current at Tc=25°C

Continuous Drain Current at Tc=100°C

2.5*

16*

I_{D (DC)}

I_{DM (pluse)}

P_D

2.5

(Note 1)

Pulsed drain current

Maximum Power Dissipation(Tc=25℃)

28.4

0.227

Derate above 25°C

0.328

W/°C

(Note2)

E^AS

I_AR

Single pulse avalanche energy

(Note 1)

0.7

Avalanche current

Repetitive Avalanche energy ，t_ARlimited by T_jmax

(Note 1)

0.1

E_AR

1/9

Rev :01.06.2018

www.leiditech.com

12 3 4 5 6 7...9

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