LCE6.5 thru LCE170A, e3
1500 WATT LOW CAPACITANCE
TRANSIENT VOLTAGE SUPPRESSOR
S C O T T S D A L E D I V I S I O N
DESCRIPTION
APPEARANCE
This Transient Voltage Suppressor (TVS) product family includes a rectifier
diode element in series and opposite direction to achieve low capacitance
performance below 100 pF (see Figure 2). The low level of TVS capacitance
may be used for protecting higher frequency applications in inductive
switching environments or electrical systems involving secondary lightning
effects per IEC61000-4-5 as well as RTCA/DO-160D or ARINC 429 for
airborne avionics. With virtually instantaneous response, they also protect
from ESD and EFT per IEC61000-4-2 and IEC61000-4-4. If bipolar transient
capability is required, two of these low capacitance TVS devices may be used
in parallel in opposite directions (anti-parallel) for complete ac protection as
shown in Figure 4.
CASE 1
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
•
•
•
Unidirectional low-capacitance TVS (for bidirectional see
Figure 4)
•
•
•
Protection from switching transients and induced RF
Low capacitance for data line protection to 1 MHz
Economical plastic encapsulated TVS series for thru-
hole mounting
Protection for aircraft fast data rate lines up to Level 5
Waveform 4 and Level 2 Waveform 5A in RTCA/DO-
160D (also see MicroNote 130) & ARINC 429 with bit
rates of 100 kb/s (per ARINC 429, Part 1, par 2.4.1.1)
Suppresses transients up to 1500 watts @ 10/1000 µs
(see Figure 1)*
•
•
•
Clamps transient in less than 100 pico seconds
Working voltage (VWM) range 6.5 V to 170 V
•
•
Protection from ESD and EFT per IEC 61000-4-2 and
IEC 61000-4-4
Secondary lightning protection per IEC61000-4-5 with
42 Ohms source impedance:
Class 1: LCE6.5 to LCE170A
Class 2: LCE6.5 to LCE150A
Class 3: LCE6.5 to LCE70A
Class 4: LCE6.5 to LCE36A
Options for screening in accordance with MIL-PRF-
19500 for JAN, JANTX, JANTXV, and JANS are also
available by adding MQ, MX, MV, MSP prefixes
respectively to part numbers, e.g. MXLCE6.5A,
MVLCE45A, etc.
•
Surface mount equivalent packages also available as
SMCJLCE6.5 - SMCJLCE170A or SMCGLCE6.5 -
SMCGLCE170A in separate data sheet (consult factory
for other surface mount options)
•
•
Secondary lightning protection per IEC61000-4-5 with
12 Ohms source impedance:
Class 1 : LCE6.5 to LCE90A
Class 2: LCE6.5 to LCE45 A
Class 3: LCE6.5 to LCE22A
Class 4: LCE6.5 to LCE11A
•
•
RoHS Compliant devices available by adding “e3” suffix
Metal hermetically sealed DO-13 axial-leaded
equivalents available in the LC6.5 - LC170A series in
separate data sheet
Secondary lightning protection per IEC61000-4-5 with
2 Ohms source impedance:
Class 2: LCE6.5 to LCE20A
Class 3: LCE6.5 to LCE10A
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
•
1500 Watts for 10/1000 μs with repetition rate of 0.01% or
•
•
CASE: Void-free transfer molded thermosetting
epoxy body meeting UL94V-0
less* at lead temperature (TL) 25oC (See Figs. 1, 2, & 4)
•
•
Operating & Storage Temperatures: -65o to +150oC
TERMINATIONS: Tin-lead or RoHS Compliant
annealed matte-Tin plating readily solderable per
MIL-STD-750 method 2026
Thermal Resistance: 22ºC/W junction to lead at 3/8
inch (10 mm) from body, or 82ºC/W junction to ambient
when mounted on FR4 PC board with 4 mm2 copper
pads (1oz) and track width 1 mm, length 25 mm
•
•
•
•
POLARITY: Cathode indicated by band
MARKING: Part number and polarity band
WEIGHT: 1.5 grams. (Approx)
•
•
Steady-State Power dissipation*: 5 watts at TL = 40oC,
or 1.52 watts at TA = 25ºC when mounted on FR4 PC
board described for thermal resistance
TAPE & REEL option: Standard per EIA-296 (add
“TR” suffix to part number)
Solder Temperatures: 260 o C for 10 s (maximum)
•
See “CASE 1” package dimensions on last page
* TVS devices are not typically used for dc power dissipation and are instead operated < VWM (rated standoff voltage) except for transients that briefly
drive the device into avalanche breakdown (VBR to VC region) of the TVS element. Also see Figures 3 and 4 for further protection details in rated peak
pulse power for unidirectional and bidirectional configurations respectively.
Copyright © 2008
Microsemi
Page 1
10-29-2008 REV F
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
5秒后页面跳转
解析光耦仿真器：升级光耦合器技术的必要性
英伟达新一代Blackwell GPU过热问题致交付延迟
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
微信公众号
抖音公众号
浙公网安备 33010502006866号 浙ICP备10014259号-119
营业执照ICP证
数据手册
如果您发现信息不准确，
