是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | DO-13 | 包装说明: | O-MALF-W2 |
针数: | 2 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.50 |
风险等级: | 5.77 | Is Samacsys: | N |
其他特性: | LOW CAPACITANCE | 最大击穿电压: | 13.5 V |
最小击穿电压: | 12.2 V | 击穿电压标称值: | 12 V |
外壳连接: | CATHODE | 最大钳位电压: | 18.2 V |
配置: | SINGLE | 最小二极管电容: | 100 pF |
二极管元件材料: | SILICON | 二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE |
JESD-30 代码: | O-MALF-W2 | JESD-609代码: | e0 |
最大非重复峰值反向功率耗散: | 1500 W | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 175 °C |
最低工作温度: | -65 °C | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | LONG FORM |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性: | UNIDIRECTIONAL |
最大功率耗散: | 1 W | 认证状态: | Not Qualified |
最大重复峰值反向电压: | 11 V | 最大反向电流: | 5 µA |
子类别: | Transient Suppressors | 表面贴装: | NO |
技术: | AVALANCHE | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | WIRE | 端子位置: | AXIAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
LC11AB | LITTELFUSE |
获取价格 |
Trans Voltage Suppressor Diode, 1500W, Bidirectional, 1 Element, Silicon, DO-13 | |
LC11AE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 1500W, 11V V(RWM), Unidirectional, 1 Element, Silicon, DO- | |
LC11AE3TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 1500W, 11V V(RWM), Unidirectional, 1 Element, Silicon, DO- | |
LC11AT | LITTELFUSE |
获取价格 |
Trans Voltage Suppressor Diode, 1500W, Bidirectional, 1 Element, Silicon, DO-13 | |
LC11ATR | MICROSEMI |
获取价格 |
暂无描述 | |
LC11ATRE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 11V V(RWM), Unidirectional, | |
LC11B | LITTELFUSE |
获取价格 |
Trans Voltage Suppressor Diode, 1500W, Bidirectional, 1 Element, Silicon, DO-13 | |
LC11E3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 1500W, 11V V(RWM), Unidirectional, 1 Element, Silicon, DO- | |
LC11E3TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 1500W, 11V V(RWM), Unidirectional, 1 Element, Silicon, DO- | |
LC11TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 1500W, 11V V(RWM), Unidirectional, 1 Element, Silicon, DO- |