LC11

更新时间： 2024-02-25 18:34:53

品牌	Logo	应用领域
美高森美 - MICROSEMI		瞬态抑制器二极管局域网
页数	文件大小	规格书
4页	537K
描述
1500 WATT LOW CAPACITANCE TRANSIENT VOLTAGE SUPPRESSOR

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技术参数
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LC11 技术参数

生命周期：	Transferred	包装说明：	O-MALF-W2
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.57
其他特性：	LOW CAPACITANCE, LOW IMPEDANCE	最大击穿电压：	13.5 V
最小击穿电压：	12.2 V	外壳连接：	ISOLATED
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	JEDEC-95代码：	DO-13
JESD-30 代码：	O-MALF-W2	最大非重复峰值反向功率耗散：	1500 W
元件数量：	1	端子数量：	2
封装主体材料：	METAL	封装形状：	ROUND
封装形式：	LONG FORM	极性：	BIDIRECTIONAL
最大功率耗散：	1 W	认证状态：	Not Qualified
表面贴装：	NO	技术：	AVALANCHE
端子形式：	WIRE	端子位置：	AXIAL
Base Number Matches：	1

LC11 数据手册

LC6.5 thru LC170A

1500 WATT LOW CAPACITANCE

TRANSIENT VOLTAGE SUPPRESSOR

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

This hermetically sealed Transient Voltage Suppressor (TVS) product family

includes a rectifier diode element in series and opposite direction to achieve low

capacitance performance below 100 pF (see Figure 2). The low level of TVS

capacitance may be used for protecting higher frequency applications in

inductive switching environments or electrical systems involving secondary

lightning effects per IEC61000-4-5 as well as RTCA/DO-160D or ARINC 429 for

airborne avionics. With virtually instantaneous response, they also protect from

ESD and EFT per IEC61000-4-2 and IEC61000-4-4. If bipolar transient

capability is required, two of these low capacitance TVS devices may be used in

parallel in opposite directions (anti-parallel) for complete ac protection as shown

DO-13

(DO-202AA)

in Figure 6.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Unidirectional low-capacitance TVS series for flexible

•

Protection from switching transients and induced RF

thru-hole mounting (for bidirectional see Figure 4)

Protection for aircraft fast data rate lines per select

Suppresses transients up to 1500 watts @ 10/1000 µs

(see Figure 1)*

Clamps transient in less than 100 pico seconds

Working voltage (V_WM) range 6.5 V to 170 V

Hermetic sealed DO-13 metal package

Options for screening in accordance with MIL-PRF-

19500 for JAN, JANTX, JANTXV, and JANS are also

available by adding MQ, MX, MV, MSP prefixes

respectively to part numbers, e.g. MXLC6.5A, etc.

Surface mount equivalent packages also available as

SMCJLCE6.5 - SMCJLCE170A or SMCGLCE6.5 -

SMCGLCE170A in separate data sheet (consult

factory for other surface mount options)

level waveforms in RTCA/DO-160D & ARINC 429

•

ESD & EFT protection per IEC 61000-4-2 and -4-4

•

Secondary lightning protection per IEC61000-4-5 with

42 Ohms source impedance:

Class 1: LC6.5 to LC170A

Class 2: LC6.5 to LC150A

Class 3: LC6.5 to LC70A

Class 4: LC6.5 to LC36A

•

Secondary lightning protection per IEC61000-4-5 with

12 Ohms source impedance:

•

Class 1 : LC6.5 to LC90A

Class 2: LC6.5 to LC45 A

Class 3: LC6.5 to LC22A

Class 4: LC6.5 to LC11A

Plastic axial-leaded equivalents available in the

•

Secondary lightning protection per IEC61000-4-5 with

LCE6.5 - LCE170A series in separate data sheet

2 Ohms source impedance:

Class 2: LC6.5 to LC20A

Class 3: LC6.5 to LC10A

Inherently radiation hard per Microsemi MicroNote 050

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

• 1500 Watts at 10/1000 µs with repetition rate of 0.01% or

•

CASE: DO-13 (DO-202AA), welded, hermetically

less* at lead temperature (T_L) 25^oC (see Figs. 1, 2, & 4)

sealed metal and glass

• Operating & Storage Temperatures: -65^oto +175^oC

•

FINISH: All external metal surfaces are Tin-Lead

plated and solderable per MIL-STD-750 method 2026

• THERMAL RESISTANCE: 50^oC/W (Typical) junction to

lead at 0.375 inches (10 mm) from body or 110 ^oC/W

junction to ambient when mounted on FR4 PC board

with 4 mm²copper pads (1 oz) and track width 1 mm,

length 25 mm

POLARITY: Cathode connected to case as shown by

diode symbol (cathode positive for normal operation)

•

MARKING: Part number and polarity diode symbol

WEIGHT: 1.4 grams. (Approx)

• DC Power Dissipation*: 1 Watt at T_L< +125^oC 3/8” (10

TAPE & REEL option: Standard per EIA-296 (add

mm) from body (see derating in Fig 3 and note below)

“TR” suffix to part number)

• Solder Temperatures: 260 ^oC for 10 s (maximum)

•

See package dimension on last page

* TVS devices are not typically used for dc power dissipation and are instead operated < V_WM(rated standoff voltage) except for transients that briefly

drive the device into avalanche breakdown (V_BRto V_Cregion) of the TVS element. Also see Figures 3 and 4 for further protection details in rated peak

pulse power for unidirectional and bidirectional configurations respectively.

Microsemi

Page 1

10-21-2004 REV C

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3 4

中文翻译

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LC11 替代型号

型号	品牌	替代类型	描述	数据表
1N5636	LITTELFUSE	类似代替	Silicon Avalanche Diodes - 1500 Watt Metal Axial Leaded Transient Voltage Suppressors
MQLC11	MICROSEMI	功能相似	Trans Voltage Suppressor Diode, 1500W, 11V V(RWM), Unidirectional, 1 Element, Silicon, DO-
1N5636	MICROSEMI	功能相似	TRANSIENT ABSORPTION ZENER

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LC110	MICROSEMI	获取价格	1500 WATT LOW CAPACITANCE TRANSIENT VOLTAGE SUPPRESSOR
LC11011-141	SANYO	获取价格	Computer Image Signal Processing Full-Color Gray-Scale Processor
LC11012-141	SANYO	获取价格	Computer Image Signal Processing Full-Color Gray-Scale Processor
LC11014-241	SANYO	获取价格	Computer Image Signal Processing Full-Color Gray-Scale Processor
LC1107AC	ETC	获取价格
LC110A	MICROSEMI	获取价格	TRANSIENT ABSORPTION ZENER
LC110AE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 110V V(RWM), Unidirectional, 1 Element, Silicon, DO
LC110AE3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 110V V(RWM), Unidirectional, 1 Element, Silicon, DO

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