Datasheet > LBSS138LT1

LBSS138LT1

更新时间： 2024-10-28 11:39:47

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
5页	169K
描述
Power MOSFET 200 mAmps, 50 Volts N-hannel SOT-3

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技术参数
数据手册

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LBSS138LT1 技术参数

是否Rohs认证：	不符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.81	Is Samacsys：	N
配置：	Single	最大漏极电流 (Abs) (ID)：	0.2 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-609代码：	e0
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	0.225 W
子类别：	FET General Purpose Power	表面贴装：	YES
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

LBSS138LT1 数据手册

LESHAN RADIO COMPANY, LTD.

Power MOSFET

200 mAmps, 50 Volts

N–Channel SOT–23

LBSS138LT1

Typical applications are dc–dc converters, power management in

portable and battery–powered products such as computers, printers,

PCMCIA cards, cellular and cordless telephones.

• Low Threshold Voltage (V _{GS(th): 0.5V...1.5V) makes it ideal for low}

voltage applications

SOT– 23 (TO–236AB)

• Miniature SOT–23 Surface Mount Package saves board space

• Pb−Free Package May be Available. The G−Suffix Denotes a

Pb−Free Lead Finish

200 mAMPS

50 VOLTS

R _DS(on)= 3.5 W

N - Channel

MAXIMUM RATINGS (T_{A = 25 C unless otherwise noted)}

Symbol

V_DSS

Value

Unit

Vdc

Rating

Drain–to–Source Voltage

Gate–to–Source Voltage – Continuous

V_GS

± 20

Drain Current

– Continuous @ T = 25°C

I_D

I_DM

200

800

– Pulsed Drain Current (t ≤ 10 µs)

Total Power Dissipation @ T = 25°C

P_D

225

MARKING DIAGRAM

& PIN ASSIGNMENT

Operating and Storage Temperature

Range

T_J,

– 55 to

150

°C

stg

Drain

Thermal Resistance – Junction–to–Ambient

R_θJA

T_L

556

260

°C/W

°C

Maximum Lead Temperature for Soldering

Purposes, for 10 seconds

Gate

Source

J1 = Device Code

= Work Week

ORDERING INFORMATION

Device

Package

Shipping

LBSS138LT1

SOT–23

3000 Tape & Reel

LBSS138LT1G

LBSS138LT1-1/5

12 3 4 5

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