YJ Planar Fast Recovery Diode Die Specification
Anode
600V 15A, Fast recovery diode die based on silicon planar process
Part No.:LBDB5T600SS-330A
Main Products Characterstics
• Average forward current: IF(AV) = 15A
• Maximum operating junction temperature: Tj = 150 °C
• Planar Construction
• Top metal: Ag
Cathode
Maximum Ratings
Parameter
Static Electrical Characteristics (Ta = 25°C)
Value
Symbol
Rating
Parameter
Symbol
Spec
Typical
VRRM
IF(AV)
Repetitive peak reverse voltage
Average forward current
600V
15A
Reverse breakdown voltage
IR = 50uA
VBR
VF
Trr
IR
680V
690V
Maximum forward voltage drop
Non−repetitive peak surge current
(tp = 8.3 ms, halfwave, 1 cycle)
IFSM
Tstg
Tj
250A
-40 to +150 °C
150 °C
0.9V
500ns
2uA
0.87V
440ns
IF = 7.5A, Pulse Test: tp = 380 μs, δ ≤ 2%
Reverse Recovery Time
IF=0.5A, IR=1A, Irr=0.25A
Storage temperature range
Maximum reverse current VR = VRRM
Pulse Test: tp = 10 ms, δ ≤ 2%
Maximum operating junction
temperature
0.05uA
Device Schematics and Outline Drawing
Top Metal
Pad
330um
Die Thickness
Die Size *
Active area
3000x3000um
1878x1878um
2252x2252um
Ag
Active
Area
Top Metal Pad
Top Metal
Active Area
Top Metal
Back Metal
SiO2
Stop Ring
Ag
Note: 1 *: Cutting street width is around 40um
Epi
Die Size
Substrate
Back Metal
Important Notice
Specification apply to die only. Actual performance may degrade when assembled.
Recommended Storage Environment:
Yangjie Electronics does not guarantee device performance after assembly.
All operating parameters must be validated for each customer application by customer's
technical experts.
Store in original container, in dessicated nitrogen, with no contamination.
Shelf life for parts stored in above condition is 2 years.
Data sheet information is subjected to change without notice.
If the storage is done in normal atmosphere shelf life is reduced to 6 months.
扬州扬杰电子科技股份有限公司
电话:0514-80982389
传真:0514-80980189
Yangzhou Yangjie Electronics Technology Co.,Ltd.
Yangzhou Yangjie Electronics Technology Co.,Ltd.