5秒后页面跳转
LBCW70LT1G PDF预览

LBCW70LT1G

更新时间: 2024-10-28 05:41:35
品牌 Logo 应用领域
乐山 - LRC 晶体晶体管
页数 文件大小 规格书
7页 339K
描述
General Purpose Transistors PNP Silicon

LBCW70LT1G 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:,Reach Compliance Code:unknown
风险等级:5.61最大集电极电流 (IC):0.1 A
配置:Single最小直流电流增益 (hFE):215
最高工作温度:150 °C极性/信道类型:PNP
最大功率耗散 (Abs):0.3 W子类别:Other Transistors
表面贴装:YESBase Number Matches:1

LBCW70LT1G 数据手册

 浏览型号LBCW70LT1G的Datasheet PDF文件第2页浏览型号LBCW70LT1G的Datasheet PDF文件第3页浏览型号LBCW70LT1G的Datasheet PDF文件第4页浏览型号LBCW70LT1G的Datasheet PDF文件第5页浏览型号LBCW70LT1G的Datasheet PDF文件第6页浏览型号LBCW70LT1G的Datasheet PDF文件第7页 
LESHAN RADIO COMPANY, LTD.  
GeneralPurposeTransistors  
PNP Silicon  
LBCW69LT1G  
LBCW70LT1G  
3
COLLECTOR  
1
BASE  
3
2
Featrues  
EMITTER  
1
We declare that the material of product  
compliance with RoHS requirements.  
MAXIMUM RATINGS  
2
CASE 318–08, STYLE 6  
SOT–23 (TO–236AB)  
Rating  
Symbol  
V CEO  
V EBO  
I C  
Value  
– 45  
Unit  
Collector–Emitter Voltage  
Emitter–Base Voltage  
Collector Current — Continuous  
Vdc  
Vdc  
– 5.0  
– 100  
mAdc  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation FR– 5 Board, (1)  
TA = 25°C  
PD  
225  
1.8  
mW  
mW/°C  
°C/W  
Derate above 25°C  
Thermal Resistance, Junction to Ambient  
Total Device Dissipation  
RθJA  
PD  
556  
300  
2.4  
mW  
Alumina Substrate, (2) TA = 25°C  
Derate above 25°C  
mW/°C  
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
RθJA  
417  
°C/W  
TJ , Tstg  
–55 to +150  
°C  
DEVICE MARKING  
LBCW69LT1G = H1; LBCW70LT1G= H2  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)  
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Breakdown Voltage (IC = –2.0 mAdc, IB = 0 )  
Collector–Emitter Breakdown Voltage (IC = –100 µAdc, V EB = 0 )  
Emitter–Base Breakdown Voltage (I E= –10 µAdc, I C = 0)  
Collector Cutoff Current  
V (BR)CEO  
V (BR)CES  
V (BR)EBO  
I CEO  
– 45  
– 50  
– 5.0  
Vdc  
Vdc  
Vdc  
(VCE = –20 Vdc, I E = 0 )  
– 100  
– 10  
nAdc  
(VCE = –20 Vdc, I E = 0 , TA = 100°C)  
1. FR– 5 = 1.0 x 0.75 x 0.062 in.  
µAdc  
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.  
1/7  

与LBCW70LT1G相关器件

型号 品牌 获取价格 描述 数据表
LBCW70LT3G LRC

获取价格

General Purpose Transistors PNP Silicon
LBD101/3H3Y4G-XX-PF LIGITEK

获取价格

LED Display
LBD101-21-XX LIGITEK

获取价格

BAR DIGIT LED DISPLAY
LBD101-22-XX LIGITEK

获取价格

BAR DIGIT LED DISPLAY
LBD101-22-XX-PF LIGITEK

获取价格

BAR DIGIT LED DISPLAY
LBD101-22Y8G-XX-P4 LIGITEK

获取价格

BAR DIGIT LED DISPLAY
LBD101-2-3H3Y4G-11-PF LIGITEK

获取价格

BAR DIGIT LED DISPLAY
LBD101-2-3H3Y4G-12-PF LIGITEK

获取价格

BAR DIGIT LED DISPLAY
LBD101-2-3H3Y4G-13-PF LIGITEK

获取价格

BAR DIGIT LED DISPLAY
LBD101-2-3H3Y4G-14-PF LIGITEK

获取价格

BAR DIGIT LED DISPLAY