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LBCW68GLT1G PDF预览

LBCW68GLT1G

更新时间: 2024-10-28 05:41:31
品牌 Logo 应用领域
乐山 - LRC 晶体晶体管
页数 文件大小 规格书
3页 93K
描述
General Purpose Transistors

LBCW68GLT1G 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:,Reach Compliance Code:unknown
风险等级:5.61最大集电极电流 (IC):0.8 A
配置:Single最小直流电流增益 (hFE):120
最高工作温度:150 °C极性/信道类型:PNP
最大功率耗散 (Abs):0.3 W子类别:Other Transistors
表面贴装:YES标称过渡频率 (fT):100 MHz
Base Number Matches:1

LBCW68GLT1G 数据手册

 浏览型号LBCW68GLT1G的Datasheet PDF文件第2页浏览型号LBCW68GLT1G的Datasheet PDF文件第3页 
LESHAN RADIO COMPANY, LTD.  
GeneralPurposeTransistors  
PNP Silicon  
LBCW68GLT1G  
We declare that the material of product compliance with RoHS requirements.  
ORDERING INFORMATION  
3
Device  
Marking  
DG  
Shipping  
3000/Tape&Reel  
10000/Tape&Reel  
LBCW68GLT1G  
LBCW68GLT3G  
1
DG  
2
CASE 318–08, STYLE 6  
SOT–23 (TO–236AB)  
MAXIMUM RATINGS  
Rating  
Symbol  
V CEO  
V CBO  
V EBO  
I C  
Value  
– 45  
Unit  
Vdc  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
3
COLLECTOR  
– 60  
Vdc  
– 5.0  
– 800  
Vdc  
1
BASE  
Collector Current — Continuous  
mAdc  
2
THERMAL CHARACTERISTICS  
Characteristic  
EMITTER  
Symbol  
Max  
Unit  
Total Device Dissipation FR– 5 Board, (1)  
TA = 25°C  
PD  
225  
1.8  
mW  
mW/°C  
°C/W  
Derate above 25°C  
Thermal Resistance, Junction to Ambient  
Total Device Dissipation  
RθJA  
PD  
556  
300  
2.4  
mW  
Alumina Substrate, (2) TA = 25°C  
Derate above 25°C  
mW/°C  
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
RθJA  
417  
°C/W  
°C  
TJ , Tstg  
–55 to +150  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Breakdown Voltage (IC = –10 mAdc, IB = 0 )  
Collector–Emitter Breakdown Voltage (IC = –10 µAdc, VEB = 0 )  
Emitter–Base Breakdown Voltage (I E= –10 µAdc, I C = 0)  
Collector Cutoff Current  
V (BR)CEO  
V (BR)CES  
V (BR)EBO  
I CES  
– 45  
– 60  
– 5.0  
Vdc  
Vdc  
Vdc  
(VCE = –45 Vdc, I E= 0 )  
– 20  
– 10  
– 20  
nAdc  
µAdc  
nAdc  
(VCE = –45 Vdc, I B= 0 , TA = 150°C)  
Emitter Cutoff Current (VEB = – 4.0 Vdc, I C = 0)  
1. FR– 5 = 1.0 x 0.75 x 0.062 in.  
I EBO  
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.  
1/3  

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