Datasheet > LBCW65ALT1G

LBCW65ALT1G

更新时间： 2024-10-28 12:01:27

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管
页数	文件大小	规格书
3页	69K
描述
General Purpose Transistors NPN Silicon

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数据手册

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LBCW65ALT1G 数据手册

LESHAN RADIO COMPANY, LTD.

GeneralPurposeTransistors

NPN Silicon

LBCW65ALT1G

Featrues

We declare that the material of product

compliance with RoHS requirements.

MAXIMUM RATINGS

Rating

Symbol

V _CEO

V _CBO

V _EBO

I _C

Value

Unit

Vdc

CASE 318–08, STYLE 6

SOT–23 (TO–236AB)

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current — Continuous

Vdc

5.0

Vdc

800

mAdc

COLLECTOR

THERMAL CHARACTERISTICS

Characteristic

BASE

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board, (1)

T_A= 25°C

P_D

225

1.8

EMITTER

mW/°C

°C/W

Derate above 25°C

Thermal Resistance, Junction to Ambient

Total Device Dissipation

R_θJA

P_D

556

300

2.4

Alumina Substrate, (2) T_A= 25°C

Derate above 25°C

mW/°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

R_θJA

417

°C/W

T_J, T_stg

–55 to +150

°C

DEVICE MARKING

LBCW65ALT1G = EA

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(I_C= 10mAdc, I_B= 0 )

V _(BR)CEO

—

Vdc

Collector–Emitter Breakdown Voltage

(I_C= 10 µAdc, V _EB= 0 )

V _(BR)CES

Emitter–Base Breakdown Voltage

(I _E= 10 µAdc, I _C= 0)

V _(BR)EBO

I _CES

5.0

—

Vdc

Collector Cutoff Current

(V_CE= 32 Vdc, I_E= 0 )

—

nAdc

(V_CE= 32 Vdc, I_E= 0 , T_A= 150°C)

Emitter Cutoff Current

µAdc

I _EBO

—

nAdc

(V _EB= 4.0 Vdc, I _C= 0)

1. FR– 5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

Rev.O 1/3

12 3

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