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LBC859CLT1G PDF预览

LBC859CLT1G

更新时间: 2024-10-28 11:39:51
品牌 Logo 应用领域
乐山 - LRC 晶体晶体管
页数 文件大小 规格书
7页 147K
描述
General Purpose Transistors PNP Silicon

LBC859CLT1G 技术参数

生命周期:Contact Manufacturer包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.8最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:30 V配置:SINGLE
最小直流电流增益 (hFE):420JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP最大功率耗散 (Abs):0.3 W
子类别:Other Transistors表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

LBC859CLT1G 数据手册

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LESHAN RADIO COMPANY, LTD.  
General Purpose Transistors  
PNP Silicon  
LBC856ALT1  
Series  
Moisture Sensitivity Level: 1  
ESD Rating – Human Body Model: >4000 V  
ESD Rating – Machine Model: >400 V  
Pb-Free Packages are Available  
3
1
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
2
Rating  
Symbol  
Value  
Unit  
Collector-Emitter Voltage  
LBC856  
LBC857  
V
CEO  
V
CBO  
V
EBO  
–65  
–45  
–30  
V
SOT–23  
LBC858, LBC859  
Collector-Base Voltage  
LBC856  
LBC857  
–80  
–50  
–30  
V
3
COLLECTOR  
LBC858, LBC859  
1
Emitter–Base Voltage  
–5.0  
V
BASE  
Collector Current – Continuous  
THERMAL CHARACTERISTICS  
Characteristic  
I
–100  
mAdc  
C
2
EMITTER  
Symbol  
Max  
Unit  
Total Device Dissipation FR–5 Board,  
P
D
(Note 1.) T = 25°C  
225  
1.8  
mW  
mW/°C  
A
MARKING DIAGRAM  
Derate above 25°C  
3
Thermal Resistance,  
Junction to Ambient  
R
R
556  
°C/W  
qJA  
xx  
Total Device Dissipation Alumina  
Substrate, (Note 2.) T = 25°C  
Derate above 25°C  
P
D
300  
2.4  
mW  
mW/°C  
A
xx= Device Marking  
(See Table Below)  
Thermal Resistance,  
Junction to Ambient  
417  
°C/W  
qJA  
Junction and Storage Temperature  
T , T  
J stg  
–55 to  
+150  
°C  
1. FR–5 = 1.0 x 0.75 x 0.062 in  
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.  
LBC856ALT1S-1/7  

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