Datasheet > LBC858BDW1T1G

LBC858BDW1T1G

更新时间： 2024-11-16 12:01:27

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管
页数	文件大小	规格书
6页	134K
描述
Dual General Purpose Transistors

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技术参数
数据手册

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LBC858BDW1T1G 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.7	最大集电极电流 (IC)：	0.1 A
最小直流电流增益 (hFE)：	220	最高工作温度：	150 °C
极性/信道类型：	PNP	最大功率耗散 (Abs)：	0.38 W
子类别：	Other Transistors	表面贴装：	YES
标称过渡频率 (fT)：	100 MHz	Base Number Matches：	1

LBC858BDW1T1G 数据手册

LESHAN RADIO COMPANY, LTD.

Dual General Purpose

Transistors

LBC85** DW1T1G

These transistors are designed for general purpose amplifier

applications. They are housed in the SOT–363/SC–88 which is

designed for low power surface mount applications.

RoHS requirements.

We declare that the material of product compliance with

Device Marking:

•

SOT-363

LBC856ADW1T1G= 3A

LBC856BDW1T1G= 3B

LBC857BDW1T1G= 3F

LBC857CDW1T1G= 3G

LBC858BDW1T1G= 3K

LBC858CDW1T1G = 3L

(3)

(2)

(1)

MAXIMUM RATINGS

Rating

Symbol BC856 BC857 BC858 Unit

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

–65

–80

–45

–50

–30

CEO

CBO

EBO

(4)

(5)

(6)

–5.0

–100

–5.0

–100

–5.0

–100

Collector Current –

Continuous

mAdc

THERMAL CHARACTERISTICS

DEVICE MARKING

Characteristic

Symbol

Max

Unit

Total Device Dissipation

Per Device

380

250

FR–5 Board (Note 1.)

See Table

T = 25°C

Derate Above 25°C

3.0

mW/°C

°C/W

Thermal Resistance,

Junction to Ambient

328

Junction and Storage

Temperature Range

T , T

–55 to +150

°C

stg

1. FR–5 = 1.0 x 0.75 x 0.062 in

ORDERING INFORMATION

Device

Shipping

LBC85*BDW1T1G

3000/Tape & Reel

10000/Tape & Reel

LBC85*BDW1T3G

Rev.O 1/6

12 3 4 5 6

中文翻译

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