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LBC857BTT1G PDF预览

LBC857BTT1G

更新时间: 2024-11-17 01:08:11
品牌 Logo 应用领域
乐山 - LRC /
页数 文件大小 规格书
5页 140K
描述
General Purpose Transistors PNP Silicon

LBC857BTT1G 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:,Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.84
最大集电极电流 (IC):0.1 A配置:Single
最小直流电流增益 (hFE):220最高工作温度:150 °C
极性/信道类型:PNP最大功率耗散 (Abs):0.3 W
子类别:Other Transistors表面贴装:YES
标称过渡频率 (fT):100 MHz

LBC857BTT1G 数据手册

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LESHAN RADIO COMPANY, LTD.  
General Purpose Transistors  
LBC857ATT1G  
Series  
S-LBC857ATT1G  
Series  
PNP Silicon  
These transistors are designed for general purpose amplifier  
applications. They are housed in the SC−89 package which is designed  
for low power surface mount applications.  
Features  
Pb−Free Packages are Available  
S- Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements; AEC-Q101 Qualified and  
PPAP Capable.  
MAXIMUM RATINGS (T = 25°C)  
A
SC-89  
Rating  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
Symbol  
Max  
−45  
Unit  
V
V
CEO  
V
CBO  
V
EBO  
3
−50  
V
COLLECTOR  
−5.0  
−100  
V
1
Collector Current − Continuous  
I
C
mAdc  
BASE  
2
EMITTER  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation,  
FR−4 Board (Note 1)  
P
D
200  
mW  
T = 25°C  
A
Derated above 25°C  
1.6  
mW/°C  
°C/W  
Thermal Resistance,  
R
600  
q
JA  
Junction−to−Ambient (Note 1)  
Total Device Dissipation,  
FR−4 Board (Note 2)  
P
D
300  
mW  
T = 25°C  
A
Derated above 25°C  
2.4  
mW/°C  
°C/W  
Thermal Resistance,  
R
400  
q
JA  
Junction−to−Ambient (Note 2)  
Junction and Storage  
Temperature Range  
T , T  
−55 to  
+150  
°C  
J
stg  
1. FR−4 @ min pad.  
2. FR−4 @ 1.0 × 1.0 in pad.  
ORDERING INFORMATION  
Device  
Marking  
3E  
Package  
Shipping  
LBC857ATT1G,S-LBC857ATT1G  
LBC857BTT1G,S-LBC857BTT1G  
LBC857CTT1G,S-LBC857CTT1G  
SC−89  
SC−89  
SC−89  
3,000 / Tape & Reel  
3,000 / Tape & Reel  
3,000 / Tape & Reel  
3F  
3G  
Rev.O 1/5  
 

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