Datasheet > LBC857BTT1G

LBC857BTT1G

更新时间： 2024-11-17 01:08:11

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
5页	140K
描述
General Purpose Transistors PNP Silicon

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技术参数
数据手册

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LBC857BTT1G 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.84
最大集电极电流 (IC)：	0.1 A	配置：	Single
最小直流电流增益 (hFE)：	220	最高工作温度：	150 °C
极性/信道类型：	PNP	最大功率耗散 (Abs)：	0.3 W
子类别：	Other Transistors	表面贴装：	YES
标称过渡频率 (fT)：	100 MHz

LBC857BTT1G 数据手册

LESHAN RADIO COMPANY, LTD.

General Purpose Transistors

LBC857ATT1G

Series

S-LBC857ATT1G

Series

PNP Silicon

These transistors are designed for general purpose amplifier

applications. They are housed in the SC−89 package which is designed

for low power surface mount applications.

Features

• Pb−Free Packages are Available

• S- Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC-Q101 Qualified and

PPAP Capable.

MAXIMUM RATINGS (T = 25°C)

SC-89

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Symbol

Max

−45

Unit

CEO

CBO

EBO

−50

COLLECTOR

−5.0

−100

Collector Current − Continuous

mAdc

BASE

EMITTER

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation,

FR−4 Board (Note 1)

200

T = 25°C

Derated above 25°C

1.6

mW/°C

°C/W

Thermal Resistance,

600

Junction−to−Ambient (Note 1)

Total Device Dissipation,

FR−4 Board (Note 2)

300

T = 25°C

Derated above 25°C

2.4

mW/°C

°C/W

Thermal Resistance,

400

Junction−to−Ambient (Note 2)

Junction and Storage

Temperature Range

T , T

−55 to

+150

°C

stg

1. FR−4 @ min pad.

2. FR−4 @ 1.0 × 1.0 in pad.

ORDERING INFORMATION

Device

†

Marking

Package

Shipping

LBC857ATT1G,S-LBC857ATT1G

LBC857BTT1G,S-LBC857BTT1G

LBC857CTT1G,S-LBC857CTT1G

SC−89

3,000 / Tape & Reel

Rev.O 1/5

12 3 4 5

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