Datasheet > LBC857BDW1T1

LBC857BDW1T1

更新时间： 2024-11-16 03:50:31

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管
页数	文件大小	规格书
6页	245K
描述
Dual General Purpose Transistors

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中文翻译

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技术参数
数据手册

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LBC857BDW1T1 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
最大集电极电流 (IC)：	0.1 A	最小直流电流增益 (hFE)：	220
最高工作温度：	150 °C	极性/信道类型：	PNP
最大功率耗散 (Abs)：	0.38 W	子类别：	Other Transistors
表面贴装：	YES	标称过渡频率 (fT)：	100 MHz

LBC857BDW1T1 数据手册

LESHAN RADIO COMPANY, LTD.

Dual General Purpose

Transistors

LBC856*DW1T1

These transistors are designed for general purpose amplifier

applications. They are housed in the SOT–363/SC–88 which is

designed for low power surface mount applications.

• Device Marking:

LBC856BDW1T1 = 3B

LBC857BDW1T1 = 3F

LBC857CDW1T1 = 3G

LBC858BDW1T1 = 3K

LBC858CDW1T1 = 3L

SOT-363

(3)

(2)

(1)

MAXIMUM RATINGS

Symbol BC856 BC857 BC858 Unit

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

–65

–80

–45

–50

–30

CEO

CBO

EBO

(4)

(5)

(6)

–5.0

–100

–5.0

–100

–5.0

–100

Collector Current –

Continuous

mAdc

THERMAL CHARACTERISTICS

DEVICE MARKING

Characteristic

Symbol

Max

Unit

Total Device Dissipation

Per Device

380

250

FR–5 Board (Note 1.)

See Table

T = 25°C

Derate Above 25°C

3.0

mW/°C

°C/W

Thermal Resistance,

Junction to Ambient

328

Junction and Storage

Temperature Range

T , T

–55 to +150

°C

stg

ORDERING INFORMATION

1. FR–5 = 1.0 x 0.75 x 0.062 in

Device

Package

Shipping

LBC856BDW1T1 SOT–363

LBC857BDW1T1 SOT–363

LBC857CDW1T1 SOT–36 3

LBC858BDW1T1 SOT–363

LBC858CDW1T1 SOT–363

3000 Units/Reel

LBC856–1/6

12 3 4 5 6

中文翻译

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