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LBC857AWT1G

更新时间: 2024-11-16 05:41:31
品牌 Logo 应用领域
乐山 - LRC 晶体晶体管
页数 文件大小 规格书
6页 338K
描述
General Purpose Transistors PNP Silicon

LBC857AWT1G 数据手册

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LESHAN RADIO COMPANY, LTD.  
General Purpose Transistors  
PNP Silicon  
LBC856AWT1G, BWT1G  
LBC857AWT1G, BWT1G  
LBC858AWT1G, BWT1G  
CWT1G  
These transistors are designed for general purpose  
amplifier applications. They are housed in the SOT–323/  
SC–70 which is designed for low power surface mount  
applications.  
Features  
We declare that the material of product compliance with  
RoHS requirements.  
3
MAXIMUM RATINGS  
Rating  
Symbol  
V CEO  
V CBO  
V EBO  
I C  
BC856  
–65  
BC857  
–45  
BC858  
–30  
Unit  
1
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Collector Current — Continuous  
V
2
–80  
–50  
–30  
V
V
SOT– 323 / SC-70  
–5.0  
–100  
–5.0  
–100  
–5.0  
–100  
mAdc  
3
COLLECTOR  
THERMAL CHARACTERISTICS  
Characteristic  
1
Symbol  
Max  
Unit  
BASE  
Total Device Dissipation FR– 5 Board, (1)  
TA = 25°C  
P D  
150  
mW  
2
EMITTER  
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
R θJA  
833  
°C/W  
°C  
T J , T stg  
–55 to +150  
DEVICE MARKING  
LBC856AWT1G= 3A; LBC856BWT1G= 3B; LBC857AWT1G= 3E; LBC857BWT1G = 3F;  
LBC858AWT1G= 3J; LBC858BWT1G= 3K; LBC858CWT1G= 3L  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Breakdown Voltage  
(IC = –10 mA)  
– 65  
– 45  
– 30  
– 80  
– 50  
– 30  
– 80  
– 50  
– 30  
– 5.0  
– 5.0  
– 5.0  
LBC856 Series  
V (BR)CEO  
V (BR)CES  
V (BR)CBO  
v
v
v
v
LBC857 Series  
LBC858 Series  
Collector–Emitter Breakdown Voltage  
LBC856 Series  
LBC857 Series  
LBC858 Series  
(IC = –10 µA, VEB = 0)  
Collector–Base Breakdown Voltage  
LBC856 Series  
LBC857 Series  
LBC858 Series  
(IC = – 10 µA)  
Emitter–Base Breakdown Voltage  
LBC856 Series  
LBC857 Series  
LBC858 Series  
(IE = – 1.0 µA)  
V (BR)EBO  
Collector Cutoff Current (VCB = – 30 V)  
(VCB = – 30 V, TA = 150°C)  
– 15  
– 4.0  
nA  
I CBO  
µA  
1.FR–5=1.0 x 0.75 x 0.062in  
1/6  

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