LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
LBC856AWT1G, BWT1G
LBC857AWT1G, BWT1G
LBC858AWT1G, BWT1G
CWT1G
These transistors are designed for general purpose
amplifier applications. They are housed in the SOT–323/
SC–70 which is designed for low power surface mount
applications.
Features
We declare that the material of product compliance with
RoHS requirements.
3
MAXIMUM RATINGS
Rating
Symbol
V CEO
V CBO
V EBO
I C
BC856
–65
BC857
–45
BC858
–30
Unit
1
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
V
2
–80
–50
–30
V
V
SOT– 323 / SC-70
–5.0
–100
–5.0
–100
–5.0
–100
mAdc
3
COLLECTOR
THERMAL CHARACTERISTICS
Characteristic
1
Symbol
Max
Unit
BASE
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
P D
150
mW
2
EMITTER
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R θJA
833
°C/W
°C
T J , T stg
–55 to +150
DEVICE MARKING
LBC856AWT1G= 3A; LBC856BWT1G= 3B; LBC857AWT1G= 3E; LBC857BWT1G = 3F;
LBC858AWT1G= 3J; LBC858BWT1G= 3K; LBC858CWT1G= 3L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –10 mA)
– 65
– 45
– 30
– 80
– 50
– 30
– 80
– 50
– 30
– 5.0
– 5.0
– 5.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
LBC856 Series
V (BR)CEO
V (BR)CES
V (BR)CBO
v
v
v
v
LBC857 Series
LBC858 Series
—
Collector–Emitter Breakdown Voltage
—
LBC856 Series
LBC857 Series
LBC858 Series
(IC = –10 µA, VEB = 0)
—
—
Collector–Base Breakdown Voltage
—
LBC856 Series
LBC857 Series
LBC858 Series
(IC = – 10 µA)
—
—
Emitter–Base Breakdown Voltage
LBC856 Series
—
LBC857 Series
LBC858 Series
(IE = – 1.0 µA)
V (BR)EBO
—
—
Collector Cutoff Current (VCB = – 30 V)
(VCB = – 30 V, TA = 150°C)
– 15
– 4.0
nA
I CBO
—
µA
1.FR–5=1.0 x 0.75 x 0.062in
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