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LBC857AWT1 PDF预览

LBC857AWT1

更新时间: 2024-11-16 11:39:51
品牌 Logo 应用领域
乐山 - LRC 晶体晶体管
页数 文件大小 规格书
6页 293K
描述
General Purpose Transistors PNP Silicon

LBC857AWT1 技术参数

是否Rohs认证: 不符合生命周期:Contact Manufacturer
包装说明:,Reach Compliance Code:unknown
风险等级:5.88最大集电极电流 (IC):0.1 A
配置:Single最小直流电流增益 (hFE):125
JESD-609代码:e0最高工作温度:150 °C
极性/信道类型:PNP最大功率耗散 (Abs):0.15 W
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)标称过渡频率 (fT):100 MHz
Base Number Matches:1

LBC857AWT1 数据手册

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LESHAN RADIO COMPANY, LTD.  
General Purpose Transistors  
PNP Silicon  
LBC856AWT1, BWT1  
LBC857AWT1, BWT1  
LBC858AWT1, BWT1  
CWT1  
These transistors are designed for general purpose  
amplifier applications. They are housed in the SOT–323/  
SC–70 which is designed for low power surface mount  
applications.  
Features  
Pb Free Package May be Available. The G.Suffix Denotes a  
Pb Free Lead Finish  
3
MAXIMUM RATINGS  
Rating  
Symbol  
V CEO  
V CBO  
V EBO  
I C  
BC856  
–65  
BC857  
–45  
BC858  
–30  
Unit  
1
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Collector Current — Continuous  
V
2
–80  
–50  
–30  
V
V
SOT– 323 / SC-70  
–5.0  
–100  
–5.0  
–100  
–5.0  
–100  
mAdc  
3
COLLECTOR  
THERMAL CHARACTERISTICS  
Characteristic  
1
Symbol  
Max  
Unit  
BASE  
Total Device Dissipation FR– 5 Board, (1)  
TA = 25°C  
P D  
150  
mW  
2
EMITTER  
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
R θJA  
833  
°C/W  
°C  
T J , T stg  
–55 to +150  
DEVICE MARKING  
LBC856AWT1 = 3A; LBC856BWT1 = 3B; LBC857AWT1 = 3E; LBC857BWT1 = 3F;  
LBC858AWT1 = 3J; LBC858BWT1 = 3K; LBC858CWT1 = 3L  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Breakdown Voltage  
(IC = –10 mA)  
– 65  
– 45  
– 30  
– 80  
– 50  
– 30  
– 80  
– 50  
– 30  
– 5.0  
– 5.0  
– 5.0  
LBC856 Series  
LBC857 Series  
LBC858 Series  
V (BR)CEO  
V (BR)CES  
V (BR)CBO  
v
v
v
v
Collector–Emitter Breakdown Voltage  
LBC856 Series  
LBC857 Series  
LBC858 Series  
(IC = –10 µA, VEB = 0)  
Collector–Base Breakdown Voltage  
LBC856 Series  
LBC857 Series  
LBC858 Series  
(IC = – 10 µA)  
LBC856 Series  
Emitter–Base Breakdown Voltage  
LBC857 Series  
LBC858 Series  
(IE = – 1.0 µA)  
V (BR)EBO  
Collector Cutoff Current (VCB = – 30 V)  
(VCB = – 30 V, TA = 150°C)  
– 15  
– 4.0  
nA  
I CBO  
µA  
1.FR–5=1.0 x 0.75 x 0.062in  
K6–1/6  

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