是否Rohs认证: | 不符合 | 生命周期: | Contact Manufacturer |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.88 | 最大集电极电流 (IC): | 0.1 A |
配置: | Single | 最小直流电流增益 (hFE): | 125 |
JESD-609代码: | e0 | 最高工作温度: | 150 °C |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 0.15 W |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | 标称过渡频率 (fT): | 100 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
LBC857AWT1G | LRC |
获取价格 |
General Purpose Transistors PNP Silicon | |
LBC857BDW1T1 | LRC |
获取价格 |
Dual General Purpose Transistors | |
LBC857BDW1T1G | LRC |
获取价格 |
Dual General Purpose Transistors | |
LBC857BLT1 | LRC |
获取价格 |
General Purpose Transistors PNP Silicon | |
LBC857BLT1G | LRC |
获取价格 |
General Purpose Transistors PNP Silicon | |
LBC857BLT3G | LRC |
获取价格 |
General Purpose Transistors PNP Silicon | |
LBC857BTT1G | LRC |
获取价格 |
General Purpose Transistors PNP Silicon | |
LBC857BTT1G_15 | LRC |
获取价格 |
General Purpose Transistors | |
LBC857BWT1 | LRC |
获取价格 |
General Purpose Transistors PNP Silicon | |
LBC857BWT1G | LRC |
获取价格 |
General Purpose Transistors PNP Silicon |