Datasheet > LBC856ALT3G

LBC856ALT3G

更新时间： 2024-11-16 12:26:39

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管
页数	文件大小	规格书
7页	146K
描述
General Purpose Transistors PNP Silicon

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LBC856ALT3G 数据手册

LESHAN RADIO COMPANY, LTD.

General Purpose Transistors

PNP Silicon

LBC857CLT1G

Series

• ^{Moisture Sensitivity Level: 1}

• ^{ESD Rating – Human Body Model: >4000 V}

ESD Rating – Machine Model: >400 V

•

We declare that the material of product compliance with

RoHS requirements.

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

LBC856

LBC857

CEO

CBO

EBO

–65

–45

–30

SOT–23

LBC858, LBC859

Collector-Base Voltage

LBC856

LBC857

–80

–50

–30

COLLECTOR

LBC858, LBC859

Emitter–Base Voltage

–5.0

BASE

Collector Current – Continuous

THERMAL CHARACTERISTICS

Characteristic

–100

mAdc

EMITTER

Symbol

Max

Unit

Total Device Dissipation FR–5 Board,

(Note 1.) T = 25°C

225

1.8

mW/°C

MARKING DIAGRAM

Derate above 25°C

Thermal Resistance,

Junction to Ambient

556

°C/W

qJA

Total Device Dissipation Alumina

Substrate, (Note 2.) T = 25°C

Derate above 25°C

300

2.4

mW/°C

xx= Device Marking

(See Table Below)

Thermal Resistance,

Junction to Ambient

417

°C/W

qJA

Junction and Storage Temperature

T , T

J stg

–55 to

+150

°C

1. FR–5 = 1.0 x 0.75 x 0.062 in

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

Rev.O 1/7

12 3 4 5 6 7

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