Datasheet > LBC849CWT3G

LBC849CWT3G

更新时间： 2024-11-17 00:48:55

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
6页	284K
描述
General Purpose Transistors NPN Silicon

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LBC849CWT3G 数据手册

LESHAN RADIO COMPANY, LTD.

General Purpose Transistors

NPN Silicon

LBC846AWT1G

Series

• ^{Moisture Sensitivity Level: 1}

• ^{ESD Rating – Human Body Model: >4000 V}

ESD Rating – Machine Model: >400 V

We declare that the material of product compliance with RoHS requirements.

•

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

CEO

CBO

EBO

Vdc

SOT–323 /SC–70

LBC846

LBC847, LBC850

LBC848, LBC849

Collector–Base Voltage

Vdc

COLLECTOR

LBC846

LBC847, LBC850

LBC848, LBC849

BASE

Emitter–Base Voltage

LBC846

LBC847, LBC850

LBC848, LBC849

6.0

5.0

EMITTER

Collector Current – Continuous

100

mAdc

MARKING DIAGRAM

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR–5 Board

(Note 1.)

150

= 25°C

Derate above 25°C

2.4

mW/°C

°C/W

xx= Device Marking

(See Table Below)

Thermal Resistance,

Junction to Ambient (Note 1.)

833

qJA

Junction and Storage

Temperature Range

T , T

J stg

–55 to

+150

°C

1/6

12 3 4 5 6

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