Datasheet > LBC849BLT3G

LBC849BLT3G

更新时间： 2024-09-30 00:56:59

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乐山 - LRC		/
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描述
General Purpose Transistors NPN Silicon

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LBC849BLT3G 数据手册

LESHAN RADIO COMPANY, LTD.

General Purpose Transistors

NPN Silicon

LBC846ALT1G

Series

• ^{Moisture Sensitivity Level: 1}

• ^{ESD Rating – Human Body Model: >4000 V}

ESD Rating – Machine Model: >400 V

We declare that the material of product compliance with RoHS requirements.

•

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

CEO

CBO

EBO

Vdc

SOT–23

LBC846

LBC847, LBC850

LBC848, LBC849

Collector–Base Voltage

Vdc

COLLECTOR

LBC846

LBC847, LBC850

LBC848, LBC849

BASE

Emitter–Base Voltage

LBC846

LBC847, LBC850

LBC848, LBC849

6.0

5.0

EMITTER

Collector Current – Continuous

100

mAdc

MARKING DIAGRAM

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR–5 Board

(Note 1.)

225

= 25°C

Derate above 25°C

1.8

mW/°C

°C/W

xx= Device Marking

(See Table Below)

Thermal Resistance,

Junction to Ambient (Note 1.)

556

qJA

Total Device Dissipation

Alumina Substrate (Note 2.)

300

= 25°C

Derate above 25°C

2.4

mW/°C

°C/W

Thermal Resistance,

Junction to Ambient (Note 2.)

417

qJA

Junction and Storage

Temperature Range

T , T

J stg

–55 to

+150

°C

1. FR–5 = 1.0 x 0.75 x 0.062 in

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

Rev.O 1/13

12 3 4 5 6 7...13

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