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LBC848CWT1G_15 PDF预览

LBC848CWT1G_15

更新时间: 2024-10-29 01:23:19
品牌 Logo 应用领域
乐山 - LRC /
页数 文件大小 规格书
9页 401K
描述
General Purpose Transistors

LBC848CWT1G_15 数据手册

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LESHAN RADIO COMPANY, LTD.  
GeneralPurposeTransistors  
LBC846AWT1G,BWT1G  
LBC847AWT1G,BWT1G  
NPN Silicon  
We declare that the material of product compliance with RoHS requirements.  
CWT1G  
LBC848AWT1G,BWT1G  
CWT1G  
S-LBC846AWT1G,BWT1G  
S-LBC847AWT1G,BWT1G  
CWT1G  
S-LBC848AWT1G,BWT1G  
CWT1G  
S- Prefix for Automotive and Other Applications Requiring Unique Site  
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.  
)
(
Pb Free  
ORDERING INFORMATION  
Device  
Package  
SC-70  
Shipping  
LBC846AWT1G  
3000/Tape&Reel  
10000/Tape&Reel  
S-LBC846AWT1G  
LBC846AWT3G  
S-LBC846AWT3G  
SC-70  
MAXIMUM RATINGS  
Rating  
Symbol  
BC846  
65  
BC847  
BC848  
30  
Unit  
V
3
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
V CEO  
V CBO  
V EBO  
I C  
45  
50  
80  
30  
V
1
6.0  
6.0  
100  
5.0  
V
2
Collector Current — Continuous  
100  
100  
mAdc  
SOT–323 /SC–70  
THERMAL CHARACTERISTICS  
3
COLLECTOR  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation  
P D  
150  
mW  
1
BASE  
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
R θJA  
833  
°C/W  
°C  
2
T J , T stg  
–55 to +150  
EMITTER  
DEVICE MARKING  
LBC846AWT1G = 1A; LBC846BWT1G = 1B; LBC847AWT1G = 1E; LBC847BWT1G = 1F;  
LBC847CWT1G = 1G; LBC848AWT1G = 1J; LBC848BWT1G = 1K; LBC848CWT1G = 1L;  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Breakdown Voltage  
(IC = 10 mA)  
LBC846 Series  
LBC847 Series  
LBC848 Series  
65  
45  
30  
80  
50  
30  
80  
50  
30  
6.0  
6.0  
5.0  
15  
5.0  
V (BR)CEO  
V (BR)CES  
V (BR)CBO  
v
v
v
v
Collector–Emitter Breakdown Voltage  
LBC846 Series  
LBC847 Series  
LBC848 Series  
(IC = 10 µA, VEB = 0)  
Collector–Base Breakdown Voltage  
LBC846 Series  
LBC847 Series  
LBC848 Series  
(IC = 10 µA)  
Emitter–Base Breakdown Voltage  
LBC846 Series  
LBC847 Series  
LBC848 Series  
(IE = 1.0 µA)  
V (BR)EBO  
Collector Cutoff Current (VCB = 30 V)  
nA  
I CBO  
(VCB = 30 V, TA = 150°C)  
µA  
1.FR–5=1.0 x 0.75 x 0.062in  
Rev.O 1/9  

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