LESHAN RADIO COMPANY, LTD.
GeneralPurposeTransistors
LBC846AWT1G,BWT1G
LBC847AWT1G,BWT1G
NPN Silicon
We declare that the material of product compliance with RoHS requirements.
CWT1G
LBC848AWT1G,BWT1G
CWT1G
S-LBC846AWT1G,BWT1G
S-LBC847AWT1G,BWT1G
CWT1G
S-LBC848AWT1G,BWT1G
CWT1G
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
)
(
–
Pb Free
ORDERING INFORMATION
Device
Package
SC-70
Shipping
LBC846AWT1G
3000/Tape&Reel
10000/Tape&Reel
S-LBC846AWT1G
LBC846AWT3G
S-LBC846AWT3G
SC-70
MAXIMUM RATINGS
Rating
Symbol
BC846
65
BC847
BC848
30
Unit
V
3
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V CEO
V CBO
V EBO
I C
45
50
80
30
V
1
6.0
6.0
100
5.0
V
2
Collector Current — Continuous
100
100
mAdc
SOT–323 /SC–70
THERMAL CHARACTERISTICS
3
COLLECTOR
Characteristic
Symbol
Max
Unit
Total Device Dissipation
P D
150
mW
1
BASE
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R θJA
833
°C/W
°C
2
T J , T stg
–55 to +150
EMITTER
DEVICE MARKING
LBC846AWT1G = 1A; LBC846BWT1G = 1B; LBC847AWT1G = 1E; LBC847BWT1G = 1F;
LBC847CWT1G = 1G; LBC848AWT1G = 1J; LBC848BWT1G = 1K; LBC848CWT1G = 1L;
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mA)
LBC846 Series
LBC847 Series
LBC848 Series
65
45
30
80
50
30
80
50
30
6.0
6.0
5.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
15
5.0
V (BR)CEO
V (BR)CES
V (BR)CBO
v
v
v
v
Collector–Emitter Breakdown Voltage
LBC846 Series
LBC847 Series
LBC848 Series
(IC = 10 µA, VEB = 0)
Collector–Base Breakdown Voltage
LBC846 Series
LBC847 Series
LBC848 Series
(IC = 10 µA)
Emitter–Base Breakdown Voltage
LBC846 Series
LBC847 Series
LBC848 Series
(IE = 1.0 µA)
V (BR)EBO
Collector Cutoff Current (VCB = 30 V)
nA
I CBO
(VCB = 30 V, TA = 150°C)
—
µA
1.FR–5=1.0 x 0.75 x 0.062in
Rev.O 1/9