是否Rohs认证: | 符合 | 生命周期: | Contact Manufacturer |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.75 |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 30 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 420 |
JESD-30 代码: | R-PDSO-G3 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 0.225 W |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | TIN | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 100 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
LBC848CLT3G | LRC |
获取价格 |
General Purpose Transistors NPN Silicon | |
LBC848CPDW1T1 | LRC |
获取价格 |
Dual General Purpose Transistors NPN/PNP Duals (Complimentary) | |
LBC848CPDW1T1G | LRC |
获取价格 |
Dual General Purpose Transistors | |
LBC848CPDW1T3G | LRC |
获取价格 |
Dual General Purpose Transistors NPN/PNP Duals (Complimentary) | |
LBC848CWT1 | LRC |
获取价格 |
General Purpose Transistors NPN Silicon | |
LBC848CWT1G | LRC |
获取价格 |
General Purpose Transistors NPN Silicon | |
LBC848CWT1G_15 | LRC |
获取价格 |
General Purpose Transistors | |
LBC848CWT3G | LRC |
获取价格 |
General Purpose Transistors NPN Silicon | |
LBC849 | LRC |
获取价格 |
General Purpose Transistors NPN Silicon | |
LBC849B | LRC |
获取价格 |
General Purpose Transistors NPN Silicon |