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LBC848BWT1 PDF预览

LBC848BWT1

更新时间: 2024-11-16 11:39:51
品牌 Logo 应用领域
乐山 - LRC 晶体晶体管
页数 文件大小 规格书
5页 154K
描述
General Purpose Transistors NPN Silicon

LBC848BWT1 技术参数

是否Rohs认证: 不符合生命周期:Contact Manufacturer
包装说明:,Reach Compliance Code:unknown
风险等级:5.88最大集电极电流 (IC):0.1 A
配置:Single最小直流电流增益 (hFE):200
JESD-609代码:e0最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):0.15 W
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)标称过渡频率 (fT):100 MHz
Base Number Matches:1

LBC848BWT1 数据手册

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LESHAN RADIO COMPANY, LTD.  
GeneralPurposeTransistors  
NPN Silicon  
Pb Free Package May be Available. The G.Suffix Denotes a  
Pb Free Lead Finish  
LBC846AWT1,BWT1  
LBC847AWT1,BWT1  
CWT1  
)
(
ORDERING INFORMATION Pb Free  
Device  
Package  
Shipping  
LBC848AWT1,BWT1  
CWT1  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
LBC846AWT1G,BWT1G  
SOT-323  
SOT-323  
SOT-323  
LBC847AWT1G,BWT1G,CWT1G  
LBC848AWT1G,BWT1G,CWT1G  
MAXIMUM RATINGS  
3
Rating  
Symbol  
BC846  
BC847  
45  
BC848  
30  
Unit  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Collector Current — Continuous  
V CEO  
V CBO  
V EBO  
I C  
65  
80  
V
1
2
50  
30  
V
6.0  
100  
6.0  
5.0  
V
SOT–323 /SC–70  
100  
100  
mAdc  
THERMAL CHARACTERISTICS  
Characteristic  
3
COLLECTOR  
Symbol  
Max  
Unit  
Total Device Dissipation FR– 5 Board, (1)  
TA = 25°C  
P D  
150  
mW  
1
BASE  
Thermal Resistance, Junction to Ambient  
Total Device Dissipation  
R θJA  
P D  
833  
2.4  
°C/W  
mW/°C  
°C  
2
EMITTER  
Junction and Storage Temperature  
T J , T stg  
–55 to +150  
DEVICE MARKING  
LBC846AWT1 = 1A; LBC846BWT1 = 1B; LBC847AWT1 = 1E; LBC847BWT1 = 1F;  
LBC847CWT1 = 1G; LBC848AWT1 = 1J; LBC848BWT1 = 1K; LBC848CWT1 = 1L  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Breakdown Voltage  
(IC = 10 mA)  
LBC846 Series  
LBC847 Series  
LBC848 Series  
65  
45  
30  
80  
50  
30  
80  
50  
30  
6.0  
6.0  
5.0  
15  
5.0  
V (BR)CEO  
V (BR)CES  
V (BR)CBO  
v
v
v
v
Collector–Emitter Breakdown Voltage  
LBC846 Series  
LBC847 Series  
LBC848 Series  
(IC = 10 µA, VEB = 0)  
Collector–Base Breakdown Voltage  
LBC846 Series  
LBC847 Series  
LBC848 Series  
(IC = 10 µA)  
Emitter–Base Breakdown Voltage  
LBC846 Series  
LBC847 Series  
LBC848 Series  
(IE = 1.0 µA)  
V (BR)EBO  
Collector Cutoff Current (VCB = 30 V)  
nA  
I CBO  
(VCB = 30 V, TA = 150°C)  
µA  
1.FR–5=1.0 x 0.75 x 0.062in  
K5–1/5  

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