Datasheet > LBC848BDW1T1G

LBC848BDW1T1G

更新时间： 2024-11-16 12:26:39

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管
页数	文件大小	规格书
6页	202K
描述
Dual General Purpose Transistors NPN Duals

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技术参数
数据手册

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LBC848BDW1T1G 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.68	最大集电极电流 (IC)：	0.1 A
最小直流电流增益 (hFE)：	200	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.38 W
子类别：	Other Transistors	表面贴装：	YES
标称过渡频率 (fT)：	100 MHz	Base Number Matches：	1

LBC848BDW1T1G 数据手册

LESHAN RADIO COMPANY, LTD.

Dual General Purpose Transistors

NPN Duals

LBC846ADW1T1G

LBC846BDW1T1G

LBC847BDW1T1G

LBC847CDW1T1G

LBC848BDW1T1G

LBC848CDW1T1G

These transistors are designed for general purpose amplifier

applications. They are housed in the SOT–363/SC–88 which is

designed for low power surface mount applications.

We declare that the material of product compliance with

RoHS requirements.

Q₂

See Table

Q₁

MAXIMUM RATINGS

SOT 363 /SC 88

Rating

Symbol BC846

BC847 BC848

Unit

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

V _CEO

V _CBO

V _EBO

I _C

6.0

100

6.0

100

5.0

100

Collector Current

-Continuous

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation

Per Device

P _D

380

250

FR– 5 Board, (1) T_A= 25°C

Derate above 25°C

3.0

328

mW/°C

°C/W

°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

1. FR–5 = 1.0 x 0.75 x 0.062 in.

R _θJA

T _J, T _stg

–55 to +150

ORDERING INFORMATION

Device

Marking

Shipping

LBC846ADW1T1G

LBC846ADW1T3G

3000 Units/Reel

10000 Units/Reel

LBC846BDW1T1G

LBC846BDW1T3G

LBC847BDW1T1G

LBC847BDW1T3G

LBC847CDW1T1G

3000 Units/Reel

10000 Units/Reel

3000 Units/Reel

10000 Units/Reel

3000 Units/Reel

10000 Units/Reel

LBC847CDW1T3G

LBC848BDW1T1G

LBC848BDW1T3G

3000 Units/Reel

10000 Units/Reel

3000 Units/Reel

10000 Units/Reel

LBC848CDW1T1G

LBC848CDW1T3G

Rev.O 1/6

12 3 4 5 6

中文翻译

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