Datasheet > LBC847CTT1G

LBC847CTT1G

更新时间： 2024-11-17 01:03:59

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
5页	144K
描述
General Purpose Transistors NPN Silicon

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技术参数
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LBC847CTT1G 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.8	最大集电极电流 (IC)：	0.1 A
配置：	Single	最小直流电流增益 (hFE)：	420
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.3 W	子类别：	Other Transistors
表面贴装：	YES	标称过渡频率 (fT)：	100 MHz
Base Number Matches：	1

LBC847CTT1G 数据手册

LESHAN RADIO COMPANY, LTD.

General Purpose Transistors

NPN Silicon

LBC847ATT1G

These transistors are designed for general purpose amplifier

applications. They are housed in the SC−89 package which is designed

for low power surface mount applications.

Features

S-LBC847ATT1G

Series

• Pb−Free Packages are Available

• S- Prefix for Automotive and Other Applications Requiring Unique Site

and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

MAXIMUM RATINGS (T = 25°C)

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Symbol

Max

Unit

CEO

CBO

EBO

SC-89

6.0

100

Collector Current − Continuous

mAdc

COLLECTOR

BASE

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

EMITTER

Total Device Dissipation,

FR−4 Board (Note 1)

200

T = 25°C

Derated above 25°C

1.6

mW/°C

°C/W

Thermal Resistance,

600

Junction−to−Ambient (Note 1)

Total Device Dissipation,

FR−4 Board (Note 2)

300

T = 25°C

Derated above 25°C

2.4

mW/°C

°C/W

Thermal Resistance,

400

Junction−to−Ambient (Note 2)

Junction and Storage

Temperature Range

T , T

−55 to

+150

°C

stg

1. FR−4 @ min pad.

2. FR−4 @ 1.0 × 1.0 in pad.

ORDERING INFORMATION

†

Device

Marking

Package

Shipping

LBC847ATT1G

SC−89

3,000 / Tape & Reel

S-LBC847ATT1G

LBC847BTT1G

S-LBC847BTT1G

LBC847CTT1G

S-LBC847CTT1G

Rev.O 1/5

12 3 4 5

中文翻译

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