Datasheet > LBC847CPDW1T1G

LBC847CPDW1T1G

更新时间： 2024-11-16 03:50:31

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管
页数	文件大小	规格书
11页	407K
描述
Dual General Purpose Transistors

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技术参数
数据手册

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LBC847CPDW1T1G 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.68	最大集电极电流 (IC)：	0.1 A
最小直流电流增益 (hFE)：	420	最高工作温度：	150 °C
极性/信道类型：	NPN/PNP	最大功率耗散 (Abs)：	0.38 W
子类别：	BIP General Purpose Small Signal	表面贴装：	YES
标称过渡频率 (fT)：	100 MHz	Base Number Matches：	1

LBC847CPDW1T1G 数据手册

LESHAN RADIO COMPANY, LTD.

Dual General Purpose Transistors

NPN/PNP Duals (Complimentary)

LBC846BPDW1T1G

LBC847BPDW1T1G

LBC847CPDW1T1G

LBC848BPDW1T1G

LBC848CPDW1T1G

These transistors are designed for general purpose amplifier

applications. They are housed in the SOT–363/SC–88 which is

designed for low power surface mount applications.

We declare that the material of product compliance with

RoHS requirements.

• Device Marking:

LBC846BPDW1T1G = BB

LBC847CPDW1T1G = 3G

LBC848CPDW1T1G = 13L

LBC847BPDW1T1G = 3F

LBC848BPDW1T1G = 13K

ORDERING INFORMATION

Device

Shipping

SOT 363/SC-88

CASE 419B STYLE 1

LBC846BPDW1T1G_S

LBC846BPDW1T3G_S

3000 Units/Reel

10000 Units/Reel

MAXIMUM RATINGS

-NPN

Q₁

Q₂

Rating

Symbol LBC846 LBC847 LBC848 Unit

Collector

Emitter Voltage

Base Voltage

CEO

CBO

EBO

Collector

Emitter

6.0

100

6.0

100

5.0

100

DEVICE MARKING

Collector Current Ð

Continuous

mAdc

MAXIMUM RATINGS

-PNP

Rating

Symbol LBC846 LBC847 LBC848 Unit

See Table

Collector

Emitter Voltage

Base Voltage

CEO

CBO

EBO

Collector

-80

Emitter

5.0

Collector Current Ð

Continuous

100

-100 mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation

380

250

Per Device

(1)

FR-5 Board

= 25˚C

Derate Above 25˚C

3.0

mW/˚C

˚C/W

Thermal Resistance,

Junction to Ambient

θJA

328

Junction and Storage

Temperature Range

T , T

J stg

-55 to +150

˚C

1. FR-5 = 1.0 x 0.75 x 0.062 in

1/9

12 3 4 5 6 7...11

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