Datasheet > LBC847CPDW1T1

LBC847CPDW1T1

更新时间： 2024-09-29 11:39:51

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管
页数	文件大小	规格书
9页	247K
描述
Dual General Purpose Transistors NPN/PNP Duals (Complimentary)

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数据手册

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LBC847CPDW1T1 数据手册

LESHAN RADIO COMPANY, LTD.

Dual General Purpose Transistors

NPN/PNP Duals (Complimentary)

LBC846BPDW1T1

LBC847BPDW1T1

LBC847CPDW1T1

LBC848BPDW1T1

LBC848CPDW1T1

These transistors are designed for general purpose amplifier

applications. They are housed in the SOT–363/SC–88 which is

designed for low power surface mount applications.

• Device Marking:

LBC846BPDW1T1 = BB

LBC847BPDW1T1 = 13F

LBC847CPDW1T1 = 13G

LBC848BPDW1T1 = 13K

LBC848CPDW1T1 = 13L

SOT 363/SC-88

CASE 419B STYLE 1

MAXIMUM RATINGS

-NPN

Rating

Symbol LBC846 LBC847 LBC848 Unit

Collector

Emitter Voltage

Base Voltage

CEO

CBO

EBO

Q₁

Collector

Q₂

Emitter

6.0

100

6.0

100

5.0

100

Collector Current Ð

Continuous

mAdc

MAXIMUM RATINGS

-PNP

DEVICE MARKING

Rating

Symbol LBC846 LBC847 LBC848 Unit

Collector

Emitter Voltage

Base Voltage

CEO

CBO

EBO

Collector

-80

-50

-30

See Table

Emitter

-5.0

Collector Current Ð

Continuous

-100

-100 mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

ORDERING INFORMATION

Total Device Dissipation

380

250

Device

Package

363

Shipping

Per Device

(1)

FR-5 Board

LBC846BPDW1T1 SOT

3000 Units/Reel

= 25˚C

Derate Above 25˚C

LBC847BPDW1T1 SOT

LBC847CPDW1T1 SOT

LBC848BPDW1T1 SOT

3.0

mW/˚C

˚C/W

Thermal Resistance,

Junction to Ambient

θJA

328

363

Junction and Storage

Temperature Range

T , T

J stg

55 to +150

˚C

LBC848CPDW1T1 SOT-363

1. FR-5 = 1.0 x 0.75 x 0.062 in

LBC846BP

-1/9

12 3 4 5 6 7...9

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