Datasheet > LBC847CDW1T1

LBC847CDW1T1

更新时间： 2024-09-29 11:39:51

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管
页数	文件大小	规格书
5页	168K
描述
Dual General Purpose Transistors NPN Duals

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中文翻译

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技术参数
数据手册

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LBC847CDW1T1 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.8
最大集电极电流 (IC)：	0.1 A	配置：	Single
最小直流电流增益 (hFE)：	420	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.38 W
子类别：	Other Transistors	表面贴装：	YES
标称过渡频率 (fT)：	100 MHz	Base Number Matches：	1

LBC847CDW1T1 数据手册

LESHAN RADIO COMPANY, LTD.

Dual General Purpose Transistors

NPN Duals

These transistors are designed for general purpose amplifier

applications. They are housed in the SOT–363/SC–88 which is

designed for low power surface mount applications.

LBC846BDW1T1

LBC847BDW1T1

LBC847CDW1T1

LBC848BDW1T1

LBC848CDW1T1

Q₂

See Table

Q₁

SOT 363 /SC 88

MAXIMUM RATINGS

Rating

Symbol BC846

BC847 BC848

Unit

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

V _CEO

V _CBO

V _EBO

I _C

6.0

100

6.0

100

5.0

100

Collector Current

-Continuous

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation

Per Device

P _D

380

250

FR– 5 Board, (1) T_A= 25°C

Derate above 25°C

3.0

328

mW/°C

°C/W

°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

1. FR–5 = 1.0 x 0.75 x 0.062 in.

R _θJA

T _J, T _stg

–55 to +150

ORDERING INFORMATION

Device

Package

Shipping

LBC846BDW1T1

LBC847BDW1T1

LBC847CDW1T1

LBC848BDW1T1

LBC848CDW1T1

SOT–363

3000 Units/Reel

LBC846b–1/5

12 3 4 5

中文翻译

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