Datasheet > LBC846BPDW1T1G_11

LBC846BPDW1T1G_11

更新时间： 2024-10-28 12:01:27

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管
页数	文件大小	规格书
9页	169K
描述
Dual General Purpose Transistors NPN/PNP Duals (Complimentary)

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LBC846BPDW1T1G_11 数据手册

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LESHAN RADIO COMPANY, LTD.

Dual General Purpose Transistors

NPN/PNP Duals (Complimentary)

LBC846BPDW1T1G

LBC847BPDW1T1G

LBC847CPDW1T1G

LBC848BPDW1T1G

LBC848CPDW1T1G

These transistors are designed for general purpose amplifier

applications. They are housed in the SOT–363/SC–88 which is

designed for low power surface mount applications.

We declare that the material of product compliance with

RoHS requirements.

ORDERING INFORMATION

Device

Marking

Shipping

LBC846BPDW1T1G

LBC846BPDW1T3G

LBC847BPDW1T1G

LBC847BPDW1T3G

LBC847CPDW1T1G

3000 Units/Reel

10000 Units/Reel

3000 Units/Reel

10000 Units/Reel

3000 Units/Reel

10000 Units/Reel

LBC847CPDW1T3G

LBC848BPDW1T1G

LBC848BPDW1T3G

SOT 363/SC-88

3000 Units/Reel

10000 Units/Reel

3000 Units/Reel

10000 Units/Reel

CASE 419B STYLE 1

LBC848CPDW1T1G

LBC848CPDW1T3G

MAXIMUM RATINGS

-NPN

Q₁

Q₂

Rating

Symbol LBC846 LBC847 LBC848 Unit

Collector

Emitter Voltage

Base Voltage

CEO

CBO

EBO

Collector

Emitter

6.0

100

6.0

100

5.0

100

DEVICE MARKING

Collector Current Ð

Continuous

mAdc

MAXIMUM RATINGS

-PNP

Rating

Symbol LBC846 LBC847 LBC848 Unit

See Table

Collector

Emitter Voltage

Base Voltage

CEO

CBO

EBO

Collector

-80

Emitter

5.0

Collector Current Ð

Continuous

100

-100 mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation

380

250

Per Device

(1)

FR-5 Board

= 25˚C

Derate Above 25˚C

3.0

mW/˚C

˚C/W

Thermal Resistance,

Junction to Ambient

θJA

328

Junction and Storage

Temperature Range

T , T

J stg

-55 to +150

˚C

1. FR-5 = 1.0 x 0.75 x 0.062 in

Rev.O 1/9

12 3 4 5 6 7...9

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