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LBC846BLT3G PDF预览

LBC846BLT3G

更新时间: 2024-11-22 00:57:59
品牌 Logo 应用领域
乐山 - LRC 光电二极管晶体管
页数 文件大小 规格书
13页 573K
描述
General Purpose Transistors NPN Silicon

LBC846BLT3G 技术参数

是否Rohs认证:符合生命周期:Contact Manufacturer
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.7
Is Samacsys:N最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:65 V配置:SINGLE
最小直流电流增益 (hFE):200JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN最大功率耗散 (Abs):0.3 W
子类别:Other Transistors表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

LBC846BLT3G 数据手册

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LESHAN RADIO COMPANY, LTD.  
General Purpose Transistors  
NPN Silicon  
LBC846ALT1G  
Series  
Moisture Sensitivity Level: 1  
ESD Rating – Human Body Model: >4000 V  
ESD Rating – Machine Model: >400 V  
We declare that the material of product compliance with RoHS requirements.  
3
1
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
2
Collector–Emitter Voltage  
V
CEO  
V
CBO  
V
EBO  
Vdc  
SOT–23  
LBC846  
65  
45  
30  
LBC847, LBC850  
LBC848, LBC849  
3
Collector–Base Voltage  
Vdc  
Vdc  
COLLECTOR  
LBC846  
LBC847, LBC850  
LBC848, LBC849  
80  
50  
30  
1
BASE  
Emitter–Base Voltage  
LBC846  
LBC847, LBC850  
LBC848, LBC849  
6.0  
6.0  
5.0  
2
EMITTER  
Collector Current – Continuous  
I
C
100  
mAdc  
MARKING DIAGRAM  
THERMAL CHARACTERISTICS  
Characteristic  
3
Symbol  
Max  
Unit  
Total Device Dissipation FR–5 Board  
(Note 1.)  
P
D
225  
mW  
xx  
T
A
= 25°C  
Derate above 25°C  
1.8  
mW/°C  
°C/W  
1
2
xx= Device Marking  
(See Table Below)  
Thermal Resistance,  
Junction to Ambient (Note 1.)  
R
556  
qJA  
Total Device Dissipation  
Alumina Substrate (Note 2.)  
P
D
300  
mW  
T
A
= 25°C  
Derate above 25°C  
2.4  
mW/°C  
°C/W  
Thermal Resistance,  
Junction to Ambient (Note 2.)  
R
417  
qJA  
Junction and Storage  
Temperature Range  
T , T  
J stg  
–55 to  
+150  
°C  
1. FR–5 = 1.0 x 0.75 x 0.062 in  
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.  
Rev.O 1/13  

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