Datasheet > LBC846B

LBC846B

更新时间： 2024-11-21 11:39:51

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管
页数	文件大小	规格书
6页	135K
描述
General Purpose Transistors NPN Silicon

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中文翻译

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技术参数
数据手册

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LBC846B 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.6
Base Number Matches：	1

LBC846B 数据手册

LESHAN RADIO COMPANY, LTD.

General Purpose Transistors

NPN Silicon

LBC846ALT1

Series

• Moisture Sensitivity Level: 1

• ESD Rating – Human Body Model: >4000 V

ESD Rating – Machine Model: >400 V

• Pb-Free Packages are Available

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

CEO

CBO

EBO

Vdc

SOT–23

LBC846

LBC847, LBC850

LBC848, LBC849

Collector–Base Voltage

Vdc

COLLECTOR

LBC846

LBC847, LBC850

LBC848, LBC849

BASE

Emitter–Base Voltage

LBC846

LBC847, LBC850

LBC848, LBC849

6.0

5.0

EMITTER

Collector Current – Continuous

100

mAdc

MARKING DIAGRAM

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR–5 Board

(Note 1.)

225

= 25°C

Derate above 25°C

1.8

mW/°C

°C/W

xx= Device Marking

(See Table Below)

Thermal Resistance,

Junction to Ambient (Note 1.)

556

qJA

Total Device Dissipation

Alumina Substrate (Note 2.)

300

= 25°C

Derate above 25°C

2.4

mW/°C

°C/W

Thermal Resistance,

Junction to Ambient (Note 2.)

417

qJA

Junction and Storage

Temperature Range

T , T

J stg

–55 to

+150

°C

1. FR–5 = 1.0 x 0.75 x 0.062 in

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

LBC846ALT1S-1/6

12 3 4 5 6

中文翻译

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