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LBC846AWT3G

更新时间: 2024-11-22 00:48:55
品牌 Logo 应用领域
乐山 - LRC /
页数 文件大小 规格书
6页 284K
描述
General Purpose Transistors NPN Silicon

LBC846AWT3G 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:,Reach Compliance Code:unknown
风险等级:5.83最大集电极电流 (IC):0.1 A
配置:Single最小直流电流增益 (hFE):110
最高工作温度:150 °C极性/信道类型:NPN
最大功率耗散 (Abs):0.15 W子类别:Other Transistors
表面贴装:YES标称过渡频率 (fT):100 MHz

LBC846AWT3G 数据手册

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LESHAN RADIO COMPANY, LTD.  
General Purpose Transistors  
NPN Silicon  
LBC846AWT1G  
Series  
Moisture Sensitivity Level: 1  
ESD Rating – Human Body Model: >4000 V  
ESD Rating – Machine Model: >400 V  
We declare that the material of product compliance with RoHS requirements.  
3
MAXIMUM RATINGS  
Rating  
1
Symbol  
Value  
Unit  
2
Collector–Emitter Voltage  
V
CEO  
V
CBO  
V
EBO  
Vdc  
SOT–323 /SC–70  
LBC846  
65  
45  
30  
LBC847, LBC850  
LBC848, LBC849  
3
Collector–Base Voltage  
Vdc  
Vdc  
COLLECTOR  
LBC846  
LBC847, LBC850  
LBC848, LBC849  
80  
50  
30  
1
BASE  
Emitter–Base Voltage  
LBC846  
LBC847, LBC850  
LBC848, LBC849  
6.0  
6.0  
5.0  
2
EMITTER  
Collector Current – Continuous  
I
C
100  
mAdc  
MARKING DIAGRAM  
THERMAL CHARACTERISTICS  
Characteristic  
3
Symbol  
Max  
Unit  
Total Device Dissipation FR–5 Board  
(Note 1.)  
P
D
150  
mW  
xx  
T
A
= 25°C  
Derate above 25°C  
2.4  
mW/°C  
°C/W  
xx= Device Marking  
(See Table Below)  
Thermal Resistance,  
Junction to Ambient (Note 1.)  
R
833  
qJA  
Junction and Storage  
Temperature Range  
T , T  
J stg  
–55 to  
+150  
°C  
1/6  

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