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LBC846ADW1T1G PDF预览

LBC846ADW1T1G

更新时间: 2024-10-29 01:03:23
品牌 Logo 应用领域
乐山 - LRC /
页数 文件大小 规格书
6页 202K
描述
Dual General Purpose Transistors

LBC846ADW1T1G 数据手册

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LESHAN RADIO COMPANY, LTD.  
Dual General Purpose Transistors  
NPN Duals  
LBC846ADW1T1G  
LBC846BDW1T1G  
LBC847BDW1T1G  
LBC847CDW1T1G  
LBC848BDW1T1G  
LBC848CDW1T1G  
These transistors are designed for general purpose amplifier  
applications. They are housed in the SOT–363/SC–88 which is  
designed for low power surface mount applications.  
We declare that the material of product compliance with  
RoHS requirements.  
6
Q2  
1
5
4
See Table  
Q1  
6
5
4
3
2
1
2
3
MAXIMUM RATINGS  
SOT 363 /SC 88  
Rating  
Symbol BC846  
BC847 BC848  
Unit  
V
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
V CEO  
V CBO  
V EBO  
I C  
65  
80  
45  
50  
30  
30  
V
6.0  
100  
6.0  
100  
5.0  
100  
V
Collector Current  
-Continuous  
mAdc  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation  
Per Device  
P D  
380  
250  
mW  
mW  
FR– 5 Board, (1) TA = 25°C  
Derate above 25°C  
3.0  
328  
mW/°C  
°C/W  
°C  
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
1. FR–5 = 1.0 x 0.75 x 0.062 in.  
R θJA  
T J , T stg  
–55 to +150  
ORDERING INFORMATION  
Device  
Marking  
Shipping  
LBC846ADW1T1G  
LBC846ADW1T3G  
3000 Units/Reel  
10000 Units/Reel  
1A  
1A  
1B  
1B  
1F  
LBC846BDW1T1G  
LBC846BDW1T3G  
LBC847BDW1T1G  
LBC847BDW1T3G  
LBC847CDW1T1G  
3000 Units/Reel  
10000 Units/Reel  
3000 Units/Reel  
1F  
10000 Units/Reel  
3000 Units/Reel  
1G  
1G  
1K  
10000 Units/Reel  
LBC847CDW1T3G  
LBC848BDW1T1G  
LBC848BDW1T3G  
3000 Units/Reel  
10000 Units/Reel  
3000 Units/Reel  
10000 Units/Reel  
1K  
LBC848CDW1T1G  
LBC848CDW1T3G  
1L  
1L  
Rev.O 1/6  

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