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LBC817-40LT3G PDF预览

LBC817-40LT3G

更新时间: 2024-11-22 01:11:39
品牌 Logo 应用领域
乐山 - LRC 光电二极管晶体管
页数 文件大小 规格书
10页 287K
描述
General Purpose Transistors NPN Silicon

LBC817-40LT3G 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.67
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:45 V
配置:SINGLE最小直流电流增益 (hFE):250
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
最大功率耗散 (Abs):0.3 W子类别:Other Transistors
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

LBC817-40LT3G 数据手册

 浏览型号LBC817-40LT3G的Datasheet PDF文件第2页浏览型号LBC817-40LT3G的Datasheet PDF文件第3页浏览型号LBC817-40LT3G的Datasheet PDF文件第4页浏览型号LBC817-40LT3G的Datasheet PDF文件第5页浏览型号LBC817-40LT3G的Datasheet PDF文件第6页浏览型号LBC817-40LT3G的Datasheet PDF文件第7页 
LESHAN RADIO COMPANY, LTD.  
GeneralPurposeTransistors  
NPNSilicon  
LBC817-16LT1G  
LBC817-25LT1G  
We declare that the material of product compliance with RoHS requirements.  
LBC817-40LT1G  
3
MAXIMUM RATINGS  
Rating  
Symbol  
V CEO  
V CBO  
V EBO  
I C  
Value  
45  
Unit  
V
1
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Collector Current — Continuous  
2
50  
V
SOT–23  
5.0  
V
500  
mAdc  
THERMAL CHARACTERISTICS  
Characteristic  
3
COLLECTOR  
Symbol  
Max  
Unit  
Total Device Dissipation FR– 5 Board, (1)  
TA = 25°C  
P D  
1
BASE  
225  
1.8  
mW  
mW/°C  
°C/W  
Derate above 25°C  
2
Thermal Resistance, Junction to Ambient  
Total Device Dissipation  
R θJA  
P D  
556  
EMITTER  
Alumina Substrate, (2) TA = 25°C  
Derate above 25°C  
300  
2.4  
mW  
mW/°C  
°C/W  
°C  
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
R θJA  
417  
T J , T stg  
–55 to +150  
DEVICE MARKING  
LBC817–16LT1G = 6A; LBC817–25LT1G = 6B; LBC817–40LT1G = 6C  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Breakdown Voltage  
(IC = 10 mA)  
V (BR)CEO  
45  
50  
V
V
V
Collector–Emitter Breakdown Voltage  
(VEB = 0, IC = 10 µA)  
V (BR)CES  
Emitter–Base Breakdown Voltage  
(I E = 1.0 µA)  
V (BR)EBO  
I CBO  
5.0  
Collector Cutoff Current  
(VCB = 20 V)  
100  
5.0  
nA  
(VCB = 20 V, TA = 150°C)  
µA  
1. FR–5 = 1.0 x 0.75 x 0.062 in.  
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.  
Rev.O 1/10  

LBC817-40LT3G 替代型号

型号 品牌 替代类型 描述 数据表
LBC817-40LT1G LRC

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