Datasheet > LBC817-16WT3G

LBC817-16WT3G

更新时间： 2024-10-28 12:26:39

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管
页数	文件大小	规格书
3页	171K
描述
General Purpose Transistors product compliance

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中文翻译

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技术参数
数据手册

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LBC817-16WT3G 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.68	最大集电极电流 (IC)：	0.5 A
配置：	Single	最小直流电流增益 (hFE)：	100
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.3 W	子类别：	Other Transistors
表面贴装：	YES	标称过渡频率 (fT)：	100 MHz
Base Number Matches：	1

LBC817-16WT3G 数据手册

LESHAN RADIO COMPANY, LTD.

GeneralPurposeTransistors

We declare that the material of product compliance with RoHS requirements.

•

LBC817-16WT1G

MAXIMUM RATINGS

Rating

Symbol

V _CEO

V _CBO

V _EBO

I _C

Value

Unit

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current — Continuous

SC-70

5.0

500

mAdc

THERMAL CHARACTERISTICS

COLLECTOR

Characteristic

Total Device Dissipation FR- 5 Board (1)

T _A=25 °C

Symbol

Max

Unit

P_D

150

BASE

Derate above 25°C

1.2

mW/°C

Thermal Resistance, Junction to Ambient

833

200

°C/W

EMITTER

θJA

Total Device Dissipation

P_D

Alumina Substrate, (2) T_A= 25°C

Derate above 25°C

1.6

625

mW/°C

°C/W

°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

θJA

T _J, T_stg

–55to+150

DEVICE MARKING

LBC817–16W T1G = 6A

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(I_C= 10 mA)

V _(BR)CEO

—

Collector–Emitter Breakdown Voltage

(V_EB= 0, I_C= 10 µA)

V _(BR)CES

Emitter–Base Breakdown Voltage

(I _E= 1.0 µA)

V _(BR)EBO

I _CBO

5.0

Collector Cutoff Current

(V_CB= 20 V)

—

100

5.0

(V_CB= 20 V, T_A= 150°C)

µA

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

Rev.O 1/3

12 3

中文翻译

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