Datasheet > LBC817-16LT3G

LBC817-16LT3G

更新时间： 2024-10-29 01:11:39

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
10页	287K
描述
General Purpose Transistors NPN Silicon

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数据手册

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LBC817-16LT3G 数据手册

LESHAN RADIO COMPANY, LTD.

GeneralPurposeTransistors

NPNSilicon

LBC817-16LT1G

LBC817-25LT1G

We declare that the material of product compliance with RoHS requirements.

•

LBC817-40LT1G

MAXIMUM RATINGS

Rating

Symbol

V _CEO

V _CBO

V _EBO

I _C

Value

Unit

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current — Continuous

SOT–23

5.0

500

mAdc

THERMAL CHARACTERISTICS

Characteristic

COLLECTOR

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board, (1)

T_A= 25°C

P _D

BASE

225

1.8

mW/°C

°C/W

Derate above 25°C

Thermal Resistance, Junction to Ambient

Total Device Dissipation

R _θJA

P _D

556

EMITTER

Alumina Substrate, (2) T_A= 25°C

Derate above 25°C

300

2.4

mW/°C

°C/W

°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

R _θJA

417

T _J, T _stg

–55 to +150

DEVICE MARKING

LBC817–16LT1G = 6A; LBC817–25LT1G = 6B; LBC817–40LT1G = 6C

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(I_C= 10 mA)

V _(BR)CEO

—

Collector–Emitter Breakdown Voltage

(V_EB= 0, I_C= 10 µA)

V _(BR)CES

Emitter–Base Breakdown Voltage

(I _E= 1.0 µA)

V _(BR)EBO

I _CBO

5.0

Collector Cutoff Current

(V_CB= 20 V)

—

100

5.0

(V_CB= 20 V, T_A= 150°C)

µA

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

Rev.O 1/10

12 3 4 5 6 7...10

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