Datasheet > LBC807WT1

LBC807WT1

更新时间： 2024-10-28 11:39:51

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管
页数	文件大小	规格书
3页	86K
描述
General Purpose Transistors

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中文翻译

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技术参数
数据手册

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LBC807WT1 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
最大集电极电流 (IC)：	0.5 A	配置：	Single
最小直流电流增益 (hFE)：	40	最高工作温度：	150 °C
极性/信道类型：	PNP	最大功率耗散 (Abs)：	0.3 W
子类别：	Other Transistors	表面贴装：	YES
标称过渡频率 (fT)：	100 MHz

LBC807WT1 数据手册

LESHAN RADIO COMPANY, LTD.

GeneralPurposeTransistors

COLLECTOR

BASE

LBC807WT1

EMITTER

MAXIMUM RATINGS

Rating

Symbol

V _CEO

V _CBO

V _EBO

I _C

Value

–45

Unit

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current — Continuous

–50

SOT–323 /SC-70

–5.0

–500

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board, (1)

T_A= 25°C

P _D

225

1.8

mW/°C

°C/W

Derate above 25°C

Thermal Resistance, Junction to Ambient

Total Device Dissipation

R _θJA

P _D

556

Alumina Substrate, (2) T_A= 25°C

Derate above 25°C

300

2.4

mW/°C

°C/W

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

R _θJA

417

T _J, T _stg

–55 to +150

°C

DEVICE MARKING

LBC807WT1 = 5A

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(I_C= –10 mA)

V _(BR)CEO

–45

–50

–5.0

—

Collector–Emitter Breakdown Voltage

(V_EB= 0, I C = –10µA)

V _(BR)CES

Emitter–Base Breakdown Voltage

(I_E= –1.0 µA)

V _(BR)EBO

I _CBO

Collector Cutoff Current

(V_CB= –20 V)

—

–100

–5.0

(V_CB= –20 V, T _J= 150°C)

µA

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

LBC807WT1–1/3

12 3

中文翻译

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