Datasheet > LBC807-40WT1G

LBC807-40WT1G

更新时间： 2024-10-28 12:01:27

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管
页数	文件大小	规格书
3页	101K
描述
General Purpose Transistors PNP Silicon

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数据手册

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LBC807-40WT1G 数据手册

LESHAN RADIO COMPANY, LTD.

GeneralPurposeTransistors

PNP Silicon

ƽ Pb-Free Package is available.

DEVICE MARKING AND ORDERING INFORMATION

LBC807-40WT1G

Device

Marking

Package

Shipping

LBC807-40WT1G

SOT-323

3000/Tape&Reel

LBC807-40WT3G

SOT-323

10000/Tape&Reel

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

SOT–323

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

V _CEO

V _CBO

V _EBO

I _C

–45

–50

COLLECTOR

–5.0

–500

Collector Current — Continuous

mAdc

BASE

THERMAL CHARACTERISTICS

EMITTER

Characteristic

Total Device Dissipation FR- 5 Board (1)

T _A=25 °C

Symbol

Max

Unit

P_D

150

Derate above 25°C

1.2

mW/°C

Thermal Resistance, Junction to Ambient

833

200

°C/W

θJA

Total Device Dissipation

P_D

Alumina Substrate, (2) T_A= 25°C

Derate above 25°C

1.6

625

mW/°C

°C/W

°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

θJA

T _J, T_stg

–55to+150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(I_C= –10 mA)

V _(BR)CEO

–45

–50

–5.0

—

Collector–Emitter Breakdown Voltage

(V_EB= 0, I C = –10µA)

V _(BR)CES

Emitter–Base Breakdown Voltage

(I_E= –1.0 µA)

V _(BR)EBO

I _CBO

Collector Cutoff Current

(V_CB= –20 V)

—

–100

–5.0

(V_CB= –20 V, T _J= 150°C)

µA

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

Rev.O 1/3

12 3

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