Datasheet > LBC807-25WT1G

LBC807-25WT1G

更新时间： 2024-10-28 12:01:27

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管
页数	文件大小	规格书
3页	66K
描述
General Purpose Transistors PNP Silicon

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技术参数
数据手册

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LBC807-25WT1G 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.71	最大集电极电流 (IC)：	0.5 A
配置：	Single	最小直流电流增益 (hFE)：	160
最高工作温度：	150 °C	极性/信道类型：	PNP
最大功率耗散 (Abs)：	0.3 W	子类别：	Other Transistors
表面贴装：	YES	标称过渡频率 (fT)：	100 MHz
Base Number Matches：	1

LBC807-25WT1G 数据手册

LESHAN RADIO COMPANY, LTD.

GeneralPurposeTransistors

PNPSilicon

FEATURE

LBC807-25WT1G

ƽCollector current capability I_C= -500 mA.

ƽCollector-emitter voltage V_CEO(max) = -45 V.

ƽGeneral purpose switching and amplification.

ƽPNP complement: LBC807 Series.

ƽWe declare that the material of product compliance with RoHS requirements.

DEVICE MARKING AND ORDERING INFORMATION

SOT–323

Device

Marking

Shipping

LBC807-25WT1G

LBC807-25WT3G

3000/Tape&Reel

10000/Tape&Reel

COLLECTOR

BASE

MAXIMUM RATINGS

Rating

Symbol

V _CEO

V _CBO

V _EBO

I _C

Value

Unit

EMITTER

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

–45

–50

–5.0

–500

Collector Current — Continuous

mAdc

THERMAL CHARACTERISTICS

Characteristic

Total Device Dissipation FR- 5 Board (1)

T _A=25 °C

Symbol

Max

Unit

P_D

150

Derate above 25°C

1.2

mW/°C

Thermal Resistance, Junction to Ambient

833

200

°C/W

θJA

Total Device Dissipation

P_D

Alumina Substrate, (2) T_A= 25°C

Derate above 25°C

1.6

625

mW/°C

°C/W

°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

θJA

T _J, T_stg

–55to+150

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

Rev.O 1/3

12 3

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