Datasheet > LBC807-25LT1

LBC807-25LT1

更新时间： 2024-10-28 11:39:51

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管
页数	文件大小	规格书
3页	54K
描述
General Purpose Transistors PNP Silicon

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技术参数
数据手册

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LBC807-25LT1 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.8
Is Samacsys：	N	最大集电极电流 (IC)：	0.5 A
配置：	Single	最小直流电流增益 (hFE)：	160
最高工作温度：	150 °C	极性/信道类型：	PNP
最大功率耗散 (Abs)：	0.3 W	子类别：	Other Transistors
表面贴装：	YES	标称过渡频率 (fT)：	100 MHz
Base Number Matches：	1

LBC807-25LT1 数据手册

LESHAN RADIO COMPANY, LTD.

GeneralPurposeTransistors

PNPSilicon

LBC807-16LT1

LBC807-25LT1

LBC807-40LT1

FEATURE

ƽCollector current capability I_C= -500 mA.

ƽCollector-emitter voltage V_CEO(max) = -45 V.

ƽGeneral purpose switching and amplification.

ƽNPN complement: LBC817 Series.

ƽPb-Free Package is available.

DEVICE MARKING AND ORDERING INFORMATION

SOT–23

Device

Marking

Shipping

LBC807-16LT1

3000/Tape&Reel

(Pb-Free)

LBC807-16LT1G

LBC807-25LT1

LBC807-25LT1G

LBC807-40LT1

LBC807-40LT1G

3000/Tape&Reel

COLLECTOR

(Pb-Free)

BASE

(Pb-Free)

EMITTER

MAXIMUM RATINGS

Rating

Symbol

V _CEO

Value

Unit

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

–45

–50

V _CBO

V _EBO

–5.0

–500

Collector Current — Continuous

I _C

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board, (1)

T_A

P_D

= 25°C

225

1.8

mW/°C

Derate above 25°C

Thermal Resistance, Junction to Ambient

Total Device Dissipation

R _θJA

P_D

556

°C/W

Alumina Substrate, (2) T_A

Derate above 25°C

= 25°C

300

2.4

mW/°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

R _θJA

417

°C/W

T _J

, T stg

–55 to +150

°C

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

LBC807_S-1/3

12 3

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