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LBC807-16LT3G PDF预览

LBC807-16LT3G

更新时间: 2024-11-22 01:11:39
品牌 Logo 应用领域
乐山 - LRC 开关光电二极管晶体管
页数 文件大小 规格书
10页 190K
描述
General Purpose Transistors PNP Silicon

LBC807-16LT3G 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.8
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:45 V
配置:SINGLE最小直流电流增益 (hFE):100
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
最大功率耗散 (Abs):0.3 W子类别:Other Transistors
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

LBC807-16LT3G 数据手册

 浏览型号LBC807-16LT3G的Datasheet PDF文件第2页浏览型号LBC807-16LT3G的Datasheet PDF文件第3页浏览型号LBC807-16LT3G的Datasheet PDF文件第4页浏览型号LBC807-16LT3G的Datasheet PDF文件第5页浏览型号LBC807-16LT3G的Datasheet PDF文件第6页浏览型号LBC807-16LT3G的Datasheet PDF文件第7页 
LESHAN RADIO COMPANY, LTD.  
GeneralPurposeTransistors  
PNPSilicon  
LBC807-16LT1G  
LBC807-25LT1G  
LBC807-40LT1G  
FEATURE  
ƽCollector current capability IC = -500 mA.  
ƽCollector-emitter voltage VCEO(max) = -45 V.  
ƽGeneral purpose switching and amplification.  
ƽPNP complement: LBC807 Series.  
3
ƽ
We declare that the material of product compliance with RoHS requirements.  
1
2
DEVICE MARKING AND ORDERING INFORMATION  
SOT–23  
Device  
Marking  
Shipping  
LBC807-16LT1G  
5A1  
3000/Tape&Reel  
LBC807-16LT3G  
LBC807-25LT1G  
LBC807-25LT3G  
LBC807-40LT1G  
LBC807-40LT3G  
5A1  
5B1  
10000/Tape&Reel  
3000/Tape&Reel  
10000/Tape&Reel  
3000/Tape&Reel  
10000/Tape&Reel  
3
COLLECTOR  
1
5B1  
5C1  
BASE  
2
EMITTER  
5C1  
MAXIMUM RATINGS  
Rating  
Symbol  
V CEO  
Value  
Unit  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
–45  
–50  
V
V
V CBO  
V EBO  
–5.0  
–500  
V
Collector Current — Continuous  
I C  
mAdc  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation FR– 5 Board, (1)  
TA  
PD  
= 25°C  
225  
1.8  
mW  
mW/°C  
Derate above 25°C  
Thermal Resistance, Junction to Ambient  
Total Device Dissipation  
R θJA  
PD  
556  
°C/W  
Alumina Substrate, (2) TA  
Derate above 25°C  
= 25°C  
300  
2.4  
mW  
mW/°C  
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
R θJA  
417  
°C/W  
°C  
T J  
, T stg  
–55 to +150  
1. FR–5 = 1.0 x 0.75 x 0.062 in.  
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.  
Rev.O 1/10  

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