Datasheet > LBC807-16LT1G_11

LBC807-16LT1G_11

更新时间： 2024-10-29 01:11:39

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
10页	190K
描述
General Purpose Transistors PNP Silicon

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LBC807-16LT1G_11 数据手册

LESHAN RADIO COMPANY, LTD.

GeneralPurposeTransistors

PNPSilicon

LBC807-16LT1G

LBC807-25LT1G

LBC807-40LT1G

FEATURE

ƽCollector current capability I_C= -500 mA.

ƽCollector-emitter voltage V_CEO(max) = -45 V.

ƽGeneral purpose switching and amplification.

ƽPNP complement: LBC807 Series.

We declare that the material of product compliance with RoHS requirements.

DEVICE MARKING AND ORDERING INFORMATION

SOT–23

Device

Marking

Shipping

LBC807-16LT1G

5A1

3000/Tape&Reel

LBC807-16LT3G

LBC807-25LT1G

LBC807-25LT3G

LBC807-40LT1G

LBC807-40LT3G

5A1

5B1

10000/Tape&Reel

3000/Tape&Reel

10000/Tape&Reel

3000/Tape&Reel

10000/Tape&Reel

COLLECTOR

5B1

5C1

BASE

EMITTER

5C1

MAXIMUM RATINGS

Rating

Symbol

V _CEO

Value

Unit

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

–45

–50

V _CBO

V _EBO

–5.0

–500

Collector Current — Continuous

I _C

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board, (1)

T_A

P_D

= 25°C

225

1.8

mW/°C

Derate above 25°C

Thermal Resistance, Junction to Ambient

Total Device Dissipation

R _θJA

P_D

556

°C/W

Alumina Substrate, (2) T_A

Derate above 25°C

= 25°C

300

2.4

mW/°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

R _θJA

417

°C/W

°C

T _J

, T ^stg

–55 to +150

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

Rev.O 1/10

12 3 4 5 6 7...10

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