Datasheet > LBAW56DW1T3G

LBAW56DW1T3G

更新时间： 2024-10-29 01:12:43

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
3页	165K
描述
Monolithic Dual Switching Diode

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数据手册

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LBAW56DW1T3G 数据手册

LESHAN RADIO COMPANY, LTD.

Monolithic Dual Switching Diode

Common Anode

Features

LBAW56DW1T1G

We declare that the material of product

compliance with RoHS requirements.

•

S- Prefix for Automotive and Other Applications Requiring

S-LBAW56DW1T1G

Unique Site and Control Change Requirements; AEC-Q101

Qualified and PPAP Capable.

ORDERING INFORMATION

Device

PACKAGE

Shipping

LBAW56DW1T1G

S-LBAW56DW1T1G

3000 Tape & Reel

SC88

LBAW56DW1T3G

S-LBAW56DW1T3G

10000 Tape & Reel

SC88

SOT 363/SC-88

MAXIMUM RATINGS (EACH DIODE)

Rating

Symbol

V _R

Value

Unit

Vdc

Reverse Voltage

Forward Current

I _F

200

500

mAdc

Peak Forward Surge Current

I_FM(surge)

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 4 Board, (1)

T_A= 25°C

P_D

200

Derate above 25°C

1.6

600

300

mW/°C

°C/W

Thermal Resistance, Junction to Ambient

Total Device Dissipation

R_θJA

P_D

FR-4 Board(2), T_A= 25°C

Derate above 25°C

2.4

mW/°C

°C/W

°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

R_θJA

400

T_J, T_stg

–55 to +150

DEVICE MARKING

LBAW56DW1T1G = A1

ELECTRICAL CHARACTERISTICS (T _A= 25 °C unless otherwise noted) (EACH DIODE)

Characteristic

OFF CHARACTERISTICS

Reverse Breakdown Voltage

(I _(BR)= 100 µAdc)

Reverse Voltage Leakage Current

(V_R= 25 Vdc, T_J= 150 °C)

(V _R= 70 Vdc)

Symbol

Min

Max

Unit

V _(BR)

I _R

–

Vdc

µAdc

–

2.5

(V _R= 70 Vdc, T _J= 150 °C)

Diode Capacitance

(V _R= 0, f = 1.0 MHz)

Forward Voltage

mVdc

(I _F= 1.0 mAdc)

–

715

855

(I _F= 10 mAdc)

(I _F= 50 mAdc)

1000

1250

6.0

(I _F= 150 mAdc)

Reverse Recovery Time

(I _F= I_R= 10 mAdc, I_R(REC)= 1.0 mAdc) (Figure 1) R_L= 100Ω

1. FR-5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

t _rr

Rev.A 1/3

12 3

中文翻译

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