Datasheet > LBAV99LT1

LBAV99LT1

更新时间： 2024-11-26 22:39:19

品牌	Logo	应用领域
乐山 - LRC		二极管开关
页数	文件大小	规格书
3页	110K
描述
Dual Series Switching Diode

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LBAV99LT1 数据手册

LESHAN RADIO COMPANY, LTD.

Dual Series Switching Diode

LBAV99LT1

CATHODE

ANODE

CAHODE/ANODE

DEVICE MARKING

LBAV99LT1 = A7

SOT–23

MAXIMUM RATINGS (EACH DIODE)

Rating

Symbol

Value

Unit

Vdc

Reverse Voltage

V _R

I _F

Forward Current

215

500

mAdc

Peak Forward Surge Current

Repetitive Peak Reverse Voltage

I _FM(surge)

V _RRM

Average Rectified Forward Current (1)

(averaged over any 20 ms period)

Repetitive Peak Forward Current

Non–Repetitive Peak Forward Current

t = 1.0 µ s

I _F(AV)

715

450

I _FRM

I _FSM

2.0

1.0

0.5

t = 1.0 ms

t = 1.0 S

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation

P _D

225

FR–5 Board, (1) T _A= 25°C

Derate above 25°C

1.8

mW/°C

Thermal Resistance Junction to Ambient

Total Device Dissipation

R _θJA

P _D

556

300

°C/W

Alumina Substrate, (2) T _A= 25°C

Derate above 25°C

2.4

mW/°C

Thermal Resistance Junction to Ambient

Junction and Storage Temperature

R _θJA

417

°C/W

°C

T _J, T _stg

–65 to +150

ELECTRICAL CHARACTERISTICS (T _A= 25°C unless otherwise noted) (EACH DIODE)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Reverse Breakdown Voltage(I_(BR)= 100 µA)

Reverse Voltage Leakage Current (V _R= 70 Vdc)

(V _R= 25 Vdc, T _J= 150°C)

(V _R= 70 Vdc, T _J= 150°C)

Diode Capacitance

V _(BR)

I _R

—

––

—

2.5

Vdc

µAdc

C _D

V _F

—

1.5

(V _R= 0, f = 1.0 MHz)

Forward Voltage (I _F= 1.0 mAdc)

(I _F= 10 mAdc)

––

—

––

715

855

mVdc

(I _F= 50 mAdc)

1000

1250

(I _F= 150 mAdc)

Reverse Recovery Time

t _rr

—

6.0

(I _F= I _R= 10 mAdc, i _R(REC)= 1.0 mAdc, R _L= 100Ω ) (Figure 1)

Forward Recovery Voltage

(I _F= 10 mA, t _r= 20 ns)

V _FR

1.75

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

LBAV99LT1–1/3

12 3

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