Datasheet > LBAV70WT1

LBAV70WT1

更新时间： 2024-11-29 11:39:51

品牌	Logo	应用领域
乐山 - LRC		二极管开关
页数	文件大小	规格书
4页	85K
描述
Dual Switching Diodes

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数据手册

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LBAV70WT1 数据手册

LESHAN RADIO COMPANY, LTD.

Dual Switching Diodes

LBAV70WT1

FEATURE

ƽSmall plastic SMD package.

ƽFor high-speed switching applications.

ƽPb-Free Package is available.

DEVICE MARKING AND ORDERING INFORMATION

SOT–323 (SC–70)

Device

Marking

Shipping

LBAV70WT1

3000/Tape&Reel

ANODE

(Pb-Free)

LBAV70WT1G

3000/Tape&Reel

MAXIMUM RATINGS (T = 25°C)

CATHODE

Rating

Reverse Voltage

Forward Current

Symbol

Max

Unit

V _R

I_F

Vdc

mAdc

200

500

Peak Forward Surge Current

I_FM(surge)

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR–5 Board⁽¹⁾

P_D

200

T_A= 25°C

Derate above 25°C

1.6

0.625

300

mW/°C

°C/W

Thermal Resistance, Junction to Ambient

Total Device Dissipation

R_θJA

P_D

Alumina Substrate⁽²⁾T_A= 25°C

Derate above 25°C

2.4

417

mW/°C

°C/W

°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

R_θJA

TJ, Tstg

–55 to +150

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Reverse Breakdown Voltage

(I(BR) = 100 µAdc)

(BR)

—

Vdc

Reverse Voltage Leakage Current

= 70 Vdc)

= 50 Vdc)

—

5.0

100

1.5

µAdc

nAdc

Diode Capacitance

(V = 0, f = 1.0 MHz)

Forward Voltage

mVdc

= 1.0 mAdc)

= 10 mAdc)

= 50 mAdc)

= 150 mAdc)

—

715

855

1000

1250

6.0

Reverse Recovery Time

(I = I =10 mAdc, R = 100Ω, IR(REC)= 1.0 mAdc) (Figure 1)

Forward Recovery Voltage

(I = 10 mAdc, t = 20 ns) (Figure 2)

—

1.75

1. FR–5 = 1.0 × 0.75 × 0.062 in.

2. Alumina = 0.4 × 0.3 × 0.024 in. 99.5% alumina.

3.For each individual diode while the seeond diode is unbiased.

LBAV70WT1-1/4

12 3 4

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