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LBAT54TW1T1G PDF预览

LBAT54TW1T1G

更新时间: 2024-11-29 12:01:27
品牌 Logo 应用领域
乐山 - LRC 肖特基二极管
页数 文件大小 规格书
3页 93K
描述
SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAY

LBAT54TW1T1G 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:R-PDSO-G6Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.63
配置:SEPARATE, 3 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.24 V
JESD-30 代码:R-PDSO-G6元件数量:3
端子数量:6最高工作温度:125 °C
最低工作温度:-55 °C最大输出电流:0.2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE最大功率耗散:0.225 W
最大重复峰值反向电压:30 V最大反向电流:2 µA
最大反向恢复时间:0.005 µs反向测试电压:25 V
子类别:Other Diodes表面贴装:YES
技术:SCHOTTKY端子形式:GULL WING
端子位置:DUALBase Number Matches:1

LBAT54TW1T1G 数据手册

 浏览型号LBAT54TW1T1G的Datasheet PDF文件第2页浏览型号LBAT54TW1T1G的Datasheet PDF文件第3页 
LESHAN RADIO COMPANY, LTD.  
SURFACE MOUNT SCHOTTKY  
BARRIER DIODE ARRAY  
LBAT54TW1T1G  
6
These Schottky barrier diodes are designed for high speed switching applications,  
circuit protection, and voltage clamping. Extremely low forward voltage reduces  
conduction loss. Miniature surface mount package is excellent for hand held and  
portable applications where space is limited.  
5
4
1
2
3
Extremely Fast Switching Speed  
SC-88  
Low Forward Voltage — 0.35 Volts (Typ) @ I = 10 mAdc  
F
We declare that the material of product  
compliance with RoHS requirements.  
DEVICE MARKING AND ORDERING INFORMATION  
Device  
Marking  
Shipping  
3000/Tape&Reel  
KLA  
LBAT54TW1T1G  
LBAT54TW1T3G  
TOP VIEW  
10000/Tape&Reel  
KLA  
MAXIMUM RATINGS (T = 125°C unless otherwise noted)  
J
Rating  
Reverse Voltage  
Symbol  
Value  
Unit  
V
R
30  
Volts  
Forward Power Dissipation  
P
D
@ T = 25°C  
225  
2.0  
mW  
mW/°C  
A
Derate above 25°C  
Forward Current (DC)  
Junction Temperature  
Storage Temperature Range  
I
200 Max  
125 Max  
mA  
°C  
F
T
J
T
stg  
55 to +150  
°C  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (EACH DIODE)  
A
Characteristic  
Reverse Breakdown Voltage (I = 10 µA)  
Symbol  
Min  
30  
Typ  
Max  
Unit  
Volts  
pF  
V
R
(BR)R  
Total Capacitance (V = 1.0 V, f = 1.0 MHz)  
C
10  
R
T
Reverse Leakage (V = 25 V)  
I
0.5  
2.0  
0.24  
0.5  
1.0  
5.0  
µAdc  
Vdc  
Vdc  
Vdc  
ns  
R
R
Forward Voltage (I = 0.1 mAdc)  
V
V
V
0.22  
0.41  
0.52  
F
F
F
F
Forward Voltage (I = 30 mAdc)  
F
Forward Voltage (I = 100 mAdc)  
F
Reverse Recovery Time  
t
rr  
(I = I = 10 mAdc, I  
= 1.0 mAdc) Figure 1  
F
R
R(REC)  
Forward Voltage (I = 1.0 mAdc)  
V
V
0.29  
0.35  
0.32  
0.40  
200  
300  
600  
Vdc  
Vdc  
F
F
Forward Voltage (I = 10 mAdc)  
F
F
Forward Current (DC)  
I
F
mAdc  
mAdc  
mAdc  
Repetitive Peak Forward Current  
I
FRM  
Non–Repetitive Peak Forward Current (t < 1.0 s)  
I
FSM  
Rev.A 1/3  

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