Datasheet > LBAT54SLT1G_11

LBAT54SLT1G_11

更新时间： 2024-11-09 12:01:27

品牌	Logo	应用领域
乐山 - LRC		二极管开关
页数	文件大小	规格书
3页	74K
描述
Dual Series Schottky Barrier Diodes Extremely Fast Switching Speed

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LBAT54SLT1G_11 数据手册

LESHAN RADIO COMPANY, LTD.

Dual Series Schottky

Barrier Diodes

LBAT54SLT1G

These Schottky barrier diodes are designed for high speed switching applications,

circuit protection, and voltage clamping. Extremely low forward voltage reduces

conduction loss. Miniature surface mount package is excellent for hand held and

portable applications where space is limited.

•

Extremely Fast Switching Speed

Low Forward Voltage — 0.35 Volts (Typ) @ I = 10 mAdc

SOT

23 (TO-236AB)

We declare that the material of product

compliance with RoHS requirements.

CATHODE

ANODE

ORDERING INFORMATION

Device

Marking

Shipping

CATHODE/ANODE

LBAT54SLT1G

LD3

3000/Tape&Reel

LBAT54SLT3G

10000/Tape&Reel

MAXIMUM RATINGS (T = 125°C unless otherwise noted)

Rating

Reverse Voltage

Symbol

Value

Unit

Volts

Forward Power Dissipation

@ T = 25°C

225

1.8

mW/°C

Derate above 25°C

Forward Current (DC)

Junction Temperature

Storage Temperature Range

200 Max

125 Max

°C

stg

–55 to +150

°C

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (EACH DIODE)

Characteristic

Reverse Breakdown Voltage (I = 10 µA)

Symbol

Min

—

Typ

—

Max

—

Unit

Volts

(BR)R

Total Capacitance (V = 1.0 V, f = 1.0 MHz)

—

Reverse Leakage (V = 25 V)

—

0.5

2.0

0.24

0.5

1.0

5.0

µAdc

Vdc

Forward Voltage (I = 0.1 mAdc)

—

0.22

0.41

0.52

—

Forward Voltage (I = 30 mAdc)

Forward Voltage (I = 100 mAdc)

Reverse Recovery Time

(I = I = 10 mAdc, I

= 1.0 mAdc) Figure 1

R(REC)

Forward Voltage (I = 1.0 mAdc)

—

0.29

0.35

—

0.32

0.40

200

300

600

Vdc

Forward Voltage (I = 10 mAdc)

Forward Current (DC)

mAdc

Repetitive Peak Forward Current

—

FRM

Non–Repetitive Peak Forward Current (t < 1.0 s)

—

FSM

Rev.A 1/3

12 3

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