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LBAT54SLT1G PDF预览

LBAT54SLT1G

更新时间: 2024-11-27 11:39:51
品牌 Logo 应用领域
乐山 - LRC /
页数 文件大小 规格书
3页 59K
描述
Dual Serles Schottky Barrler Dlodes

LBAT54SLT1G 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
零件包装代码:SOT-23包装说明:R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.3配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.24 VJEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3最大非重复峰值正向电流:0.6 A
元件数量:2端子数量:3
最高工作温度:125 °C最大输出电流:0.2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:0.225 W最大重复峰值反向电压:30 V
最大反向恢复时间:0.005 µs子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

LBAT54SLT1G 数据手册

 浏览型号LBAT54SLT1G的Datasheet PDF文件第2页浏览型号LBAT54SLT1G的Datasheet PDF文件第3页 
LESHAN RADIO COMPANY, LTD.  
Dual Serles Schottky  
Barrler Dlodes  
LBAT54SLT1  
These Schottky barrier diodes are designed for high speed switching applications,  
circuit protection, and voltage clamping. Extremely low forward voltage reduces  
conduction loss. Miniature surface mount package is excellent for hand held and  
portable applications where space is limited.  
3
1
2
Extremely Fast Switching Speed  
Low Forward Voltage — 0.35 Volts (Typ) @ I = 10 mAdc  
F
Pb-Free package is available.  
SOT  
-
23 (TO-236AB)  
CATHODE  
ANODE  
2
1
ORDERING INFORMATION  
3
Device  
Marking  
Shipping  
CATHODE/ANODE  
LBAT54SLT1  
LD3  
3000/Tape&Reel  
LD3  
(Pb-Free)  
LBAT54SLT1G  
3000/Tape&Reel  
MAXIMUM RATINGS (T = 125°C unless otherwise noted)  
J
Rating  
Reverse Voltage  
Symbol  
Value  
Unit  
V
R
30  
Volts  
Forward Power Dissipation  
P
D
@ T = 25°C  
225  
1.8  
mW  
mW/°C  
A
Derate above 25°C  
Forward Current (DC)  
Junction Temperature  
Storage Temperature Range  
I
200 Max  
125 Max  
mA  
°C  
F
T
J
T
stg  
55 to +150  
°C  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (EACH DIODE)  
A
Characteristic  
Reverse Breakdown Voltage (I = 10 µA)  
Symbol  
Min  
30  
Typ  
Max  
Unit  
Volts  
pF  
V
R
(BR)R  
Total Capacitance (V = 1.0 V, f = 1.0 MHz)  
C
7.6  
0.5  
10  
R
T
Reverse Leakage (V = 25 V)  
I
R
2.0  
0.24  
0.5  
1.0  
5.0  
µAdc  
Vdc  
Vdc  
Vdc  
ns  
R
Forward Voltage (I = 0.1 mAdc)  
V
F
V
F
V
F
0.22  
0.41  
0.52  
F
Forward Voltage (I = 30 mAdc)  
F
Forward Voltage (I = 100 mAdc)  
F
Reverse Recovery Time  
t
rr  
(I = I = 10 mAdc, I  
= 1.0 mAdc) Figure 1  
F
R
R(REC)  
Forward Voltage (I = 1.0 mAdc)  
V
V
0.29  
0.35  
0.32  
0.40  
200  
300  
600  
Vdc  
Vdc  
F
F
Forward Voltage (I = 10 mAdc)  
F
F
Forward Current (DC)  
I
F
mAdc  
mAdc  
mAdc  
Repetitive Peak Forward Current  
I
FRM  
Non–Repetitive Peak Forward Current (t < 1.0 s)  
I
FSM  
LBAT54SLT1–1/3  

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