LESHAN RADIO COMPANY, LTD.
Schottky Barrier Diodes
LBAT54HT1G
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low forward volt-
age reduces conduction loss. Miniature surface mount package is excellent for
hand held and portable applications where space is limited.
• Extremely Fast Switching Speed
1
• Low Forward Voltage — 0.35 Volts (Typ) @ I F = 10 mAdc
• Device Marking: JV
2
We declare that the material of product
compliance with RoHS requirements.
SOD-323
ORDERING INFORMATION
Device
Marking
Shipping
LBAT54HT31G
JV
JV
3000/Tape & Reel
10000/Tape & Reel
LBAT54HT 3G
1
2
3
CATHODE
ANODE
MAXIMUM RATINGS (TJ =125°C unless otherwise noted )
Rating
Symbol
VR
Value
30
Unit
V
Reverse Voltage
Characteristic
Symbol
PD
Max
200
Unit
mW
Total Device Dissipation FR-5 Board,*
TA = 25°C
Derate above 25°C
1.57
635
mW/°C
°C/W
Thermal Resistance Junction to Ambient
RθJA
Junction Temperature
T J
125Max
°C
°C
Storage Temperature Range
T stg
–55 to +150
* FR-4 Minimum Pad
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
V(BR)R
CT
Min
30
—
—
—
—
—
—
—
—
Typ
—
Max
—
Unit
Volts
pF
Reverse Breakdown Voltage (I R = 10 µA)
Total Capacitance (V R = 1.0 V, f = 1.0 MHz)
Reverse Leakage (V R = 25 V)
—
10
I
R
0.5
2.0
µAdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Forward Voltage (I F = 0.1 mAdc)
Forward Voltage (I F = 0.15 mAdc)
Forward Voltage (I F = 0.15 mAdc, Tj =-25°C)
Forward Voltage (I F = 0.15 mAdc, Tj =85°C)
Forward Voltage (I F = 30 mAdc)
VF
VF
VF
VF
VF
VF
0.22
0.24
0.33
0.16
0.41
0.52
0.24
0.26
0.35
0.18
0.5
Forward Voltage (I F = 100 mAdc)
Reverse Recovery Time
1.0
trr
—
—
5.0
ns
(I F = I R = 10 mAdc, I R(REC) = 1.0 mAdc, Figure 1)
Forward Voltage (I F = 1.0 mAdc)
Forward Voltage (I F = 10 mAdc)
VF
VF
IF
—
—
—
—
—
0.29
0.35
—
0.32
0.40
200
300
600
Vdc
Vdc
Forward Current (DC)
mAdc
mAdc
mAdc
Repetitive Peak Forward Current
Non–Repetitive Peak Forward Current (t < 1.0 s)
IFRM
IFSM
—
—
Rev.A 1/3